| Allicdata Part #: | 70T633S10BCI8-ND |
| Manufacturer Part#: |
70T633S10BCI8 |
| Price: | $ 100.79 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | IDT, Integrated Device Technology Inc |
| Short Description: | IC SRAM 9M PARALLEL 256CABGA |
| More Detail: | SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K... |
| DataSheet: | 70T633S10BCI8 Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 91.62860 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Dual Port, Asynchronous |
| Memory Size: | 9Mb (512K x 18) |
| Write Cycle Time - Word, Page: | 10ns |
| Access Time: | 10ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.4 V ~ 2.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 256-LBGA |
| Supplier Device Package: | 256-CABGA (17x17) |
| Base Part Number: | IDT70T633 |
Description
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Memory: 70T633S10BCI8 Application Field and Working Principle
The 70T633S10BCI8 is a semiconductor memory device that provides storage for digital information and facilitates the exchange of digital information between peripherals and other systems. It adopts a 3V bus power supply design, providing three different speed grades, which can provide 3.3/2.5/1.8V working voltage and 65ns/48ns/35ns access time.Working Principle
The status of this memory device is stored in a two-terminal switch, a field effect transistor (FET) with gates and source electrodes. When the two gates of the FET (drain and gate) are turned on, the FET switches on, or an "ON" state is established. If one of the gates is turned off, then the FET switches off, and an "OFF" state is established. The 70T633S10BCI8 operates off this logic.Features
The 70T633S10BCI8 features low signal levels, fast page-mode operation, and support for a wide variety of data protection options. It also incorporates advanced CMOS technology to provide high speed operation and low power consumption. Power consumption is typically minimized while operating in the extended read/write cycles mode by providing an operating voltage of 3.3V using the "low voltage programmable read only memory" (LVPROM) technology.Applications
This memory device is used in a variety of application fields due to its power efficiency, speed, and versatility. It can be used for data storage in consumer electronics, gaming consoles, personal computers, embedded control systems, medical equipment, and automotive systems. Additionally, the device is also used for non-volatile memory in embedded systems and memory cards.The 70T633S10BCI8 device is mainly used in applications requiring the highest speed and lowest power consumption. It is an ideal choice for data storage in consumer electronics, gaming consoles, personal computers, embedded control systems, medical equipment, and automotive systems. It is also suitable for use in memory cards and in embedded systems requiring non-volatile storage.The specific data is subject to PDF, and the above content is for reference
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70T633S10BCI8 Datasheet/PDF