70T633S10BC Allicdata Electronics
Allicdata Part #:

70T633S10BC-ND

Manufacturer Part#:

70T633S10BC

Price: $ 110.94
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 9Mb (512K...
DataSheet: 70T633S10BC datasheet70T633S10BC Datasheet/PDF
Quantity: 1000
12 +: $ 100.85500
Stock 1000Can Ship Immediately
$ 110.94
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 9Mb (512K x 18)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Base Part Number: IDT70T633
Description

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Introduction

Memory is the basis for data storage and retrieval for any computing system, including those operating within industrial applications, where reliable, efficient memory is essential. The 70T633S10BC is an industrial grade memory chip designed to meet the specific needs of the industrial environment. This article will discuss the application fields and working principle of the 70T633S10BC.

Application Fields

The 70T633S10BC has a wide range of applications in industrial and commercial settings. The chip is designed with an industrial-grade architecture and is capable of both synchronous and asynchronous access, which makes it suitable for applications where high levels of reliability and performance are necessary. The 70T633S10BC is often used for applications that require extensive data storage and retrieval, such as data logging, environmental monitoring, and industrial control systems. Additionally, the chip is often used in airplanes, aircrafts, satellites, and scientific research equipment due to its robust design.

Working Principle

The 70T633S10BC is based on a synchronous dynamic random access memory (SDRAM) architecture. The architecture relies on a memory cell array in which each cell can be addressed, written to, or read from. The SDRAM also operates using a fast page mode, which allows for fast data retrieval times. Additionally, the chip is composed of several data directions, which allow it to access the stored data easily.

The 70T633S10BC also features an error-correcting code (ECC). This feature ensures that any errors in the data stored in the SDRAM array can be detected and corrected automatically. This helps to ensure the reliability of the memory chip even when data is stored for long periods of time.

Conclusion

In conclusion, the 70T633S10BC is an industrial grade memory chip that is suitable for use in a wide range of industrial and commercial applications. The chip is capable of both synchronous and asynchronous access, and it also features an error-correcting code to ensure that data is stored reliably and accurately. With its robust design and features, the 70T633S10BC is an ideal choice for any application requiring reliable and efficient data storage and retrieval.

The specific data is subject to PDF, and the above content is for reference

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