70T653MS10BC Allicdata Electronics
Allicdata Part #:

70T653MS10BC-ND

Manufacturer Part#:

70T653MS10BC

Price: $ 146.71
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 18M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 18Mb (512...
DataSheet: 70T653MS10BC datasheet70T653MS10BC Datasheet/PDF
Quantity: 1000
1 +: $ 146.71000
10 +: $ 142.30900
100 +: $ 139.37400
1000 +: $ 136.44000
10000 +: $ 132.03900
Stock 1000Can Ship Immediately
$ 146.71
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 18Mb (512K x 36)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Base Part Number: IDT70T653M
Description

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Memory

70T653MS10BC is a chip-level memory device with a variety of applications and easy to use. It consists of 2 banks of static random access memory (SRAM), which can accept 8, 16, 32-bit data layers respectively. It provides an area of 512KB and a fully static register feature. In addition, the chip has good read/write performance, asynchronous burst read function, fast write speed and low power consumption.

Application Field

This 70T653MS10BC chip can be used in various applications such as network communication, real-time monitoring and industrial automation. It is an ideal memory module for embedded devices, microcontrollers and processor systems.

The 70T653MS10BC can also be used in other applications, such as automotive control systems, audio systems, medical systems, aviation systems and military systems. Due to its capability to support multiple banks, it can handle large amounts of data needed for these applications.

Working Principle

The 70T653MS10BC chip works by using a static random-access memory (SRAM) array. This SRAM array is divided into two fixed banks, one for 8-bit and one for 16-bit data layers, and can recognize commands from a reading or writing operation. In this operation, it uses a multiplexed address, data and control bus to communicate with the processor, allowing it to write and read data. The chip provides the user with the ability to erase all the data stored in its register. It also supports an asynchronous burst read feature, which enables it to read data faster, while consuming less power.

To maintain data integrity, the chip features parity checking features. The parity bit associated with each byte of data is stored with the data. When any data retrieved, the associated parity bit is compared with the data, and any mismatch can be detected, allowing the processor to take corrective action.

The specific data is subject to PDF, and the above content is for reference

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