70T659S12BC8 Allicdata Electronics
Allicdata Part #:

70T659S12BC8-ND

Manufacturer Part#:

70T659S12BC8

Price: $ 67.11
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (12...
DataSheet: 70T659S12BC8 datasheet70T659S12BC8 Datasheet/PDF
Quantity: 1000
1000 +: $ 61.01140
Stock 1000Can Ship Immediately
$ 67.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 4.5Mb (128K x 36)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Base Part Number: IDT70T659
Description

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The 70T659S12BC8 is a type of memory commonly used in today\'s digital applications. It is a non-volatile memory device that stores data even when power is lost. This makes it highly reliable for use in a wide range of applications including personal computers, servers, and embedded systems.

The memory is organized as a series of addresses and data bytes which are accessed through a series of address and data lines. Data lines can be set to a variety of states, usually either high or low. Addresses can be set to specify which byte should be accessed or written.

The 70T659S12BC8 is most commonly used in applications that require a high degree of reliability such as communications networks, automotive control systems, industrial automation, data management systems, and aerospace avionics.

In addition to its reliability, the 70T659S12BC8 also offers a variety of features which make it attractive for many types of embedded applications. These include reduced power consumption, a wide temperature range, and superior radiation performance. The memory is also available in a variety of form factors such as TSOP, SOJ, and PLCC.

The working principle of the 70T659S12BC8 is relatively simple. Data is written to and read from the memory in a series of clock cycles. Each cycle consists of an address phase and a data phase. In the address phase, the address lines are set to the desired address and the device is ready to accept data. In the data phase, the data lines are set to the data that is to be written or read and the device reads or writes the data.

The 70T659S12BC8 is one of the most reliable and versatile memory devices on the market today. Its wide range of features and robust design make it ideal for use in a variety of applications. Whether it is used for communications, industrial automation, or aerospace avionics, the 70T659S12BC8 will provide reliable performance and long-term stability.

The specific data is subject to PDF, and the above content is for reference

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