70T651S15BC8 Allicdata Electronics
Allicdata Part #:

70T651S15BC8-ND

Manufacturer Part#:

70T651S15BC8

Price: $ 83.11
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 9Mb (256K...
DataSheet: 70T651S15BC8 datasheet70T651S15BC8 Datasheet/PDF
Quantity: 1000
1000 +: $ 75.55380
Stock 1000Can Ship Immediately
$ 83.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 9Mb (256K x 36)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Base Part Number: IDT70T651
Description

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Memory: 70T651S15BC8 Application Field and Working Principle

The 70T651S15BC8 memory is an application-specific memory module developed by Micron that is widely used in high-end computing, gaming and server systems. This memory module is designed with a Focus on efficiency, high-speed data processing, and reliable data storage in mind. It offers superior performance compared to traditional memory designs and is designed to maximize data transfer rates while maintaining data integrity and security.

The 70T651S15BC8 memory uses a novel non-volatile, embedded process that helps to reduce latency. This technology improves the overall performance by ensuring data has immediate access to memory banks and sub-systems. This process also reduces power consumption and reduces the cost of operation for server systems.

The 70T651S15BC8 memory consists of 16-bit arrays that can be used for read-write and memory array operations. These arrays are used for data storage and can be divided into two distinct sections: the data section and the control section. The data section is comprised of 6 channels, each with four memory locations and one data output port. The control section is comprised of two channels and is responsible for controlling the timing, data flows, and organization of data that is written to the memory. The control section also handles the latches, pre-fetching techniques, refresh cycles, and fault tolerance measures.

The 70T651S15BC8 memory is used in a variety of applications such as gaming and servers. Gaming systems use the memory to store data such as game state and session information. The fast access times and reliable data storage offer gamers the highest possible performance. Servers utilize the memory for storing high-volume databases and to provide reliable data storage and data transfers. The fast access times also translate to increased throughput, resulting in faster response times.

The 70T651S15BC8 memory is manufactured to exacting specifications and is capable of data storage at speeds of up to 8GB/s. This ensures that the memory is not just fast but also reliable, making it suitable for mission-critical applications. The 70T651S15BC8 memory can also provide data-recovery capabilities with its advanced error correction code feature.

In summary, the 70T651S15BC8 memory is ideal for use in high-performance computing and gaming applications. Its non-volatile memory design allows for reduced latency, increased data transfer rates, and reliable data storage. The fast access times and reliable data storage make it suitable for mission-critical applications. Finally, its advanced error correction code feature offers data-recovery capabilities.

The specific data is subject to PDF, and the above content is for reference

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