70T651S12DRI Allicdata Electronics
Allicdata Part #:

70T651S12DRI-ND

Manufacturer Part#:

70T651S12DRI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 208PQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 9Mb (256K...
DataSheet: 70T651S12DRI datasheet70T651S12DRI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 9Mb (256K x 36)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)
Base Part Number: IDT70T651
Description

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Memory plays an important role in computing technology and is used to store data and instructions in a temporary or permanent form. The 70T651S12DRI is an example of a memory device that can be used in a variety of applications. In this article, we will discuss the application field and working principle of the 70T651S12DRI.

The 70T651S12DRI is a 64M-bit dynamic random access memory (DRAM) designed for use in high performance computing and video applications. The DRAM has a single data rate of 400MHz, which allows it to access data quickly and efficiently. It also features a low power mode, which reduces the power consumption of the device when idle. The device also supports error correction code (ECC).

In terms of its application field, the 70T651S12DRI is designed for use in high performance computing systems. It can be used for applications such as CPU caches, shared memory systems, and high performance computing (HPC) clusters. It is also suitable for video applications such as 4K and 8K resolution video. In addition, the device can be used in embedded systems for data storage.

The 70T651S12DRI is based on a double data rate (DDR) synchronous DRAM architecture. This architecture allows for fast rates of data access, which makes it suitable for high performance applications. In terms of its working principle, the device uses a synchronous DRAM design that consists of a set of memory cells organized into a grid. Data can be read from or written to the memory cells using a synchronous interface, which allows for fast data transfers. The device also supports error correction code (ECC), which can detect and correct data errors that may occur during the read or write operation.

In conclusion, the 70T651S12DRI is a 64M-bit dynamic random access memory device that is designed for use in high performance computing and video applications. It uses a double data rate synchronous DRAM architecture, which makes it suitable for high performance applications. The device also supports error correction code, which can detect and correct errors that may occur during read or write operations.

The specific data is subject to PDF, and the above content is for reference

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