70T653MS10BCG Allicdata Electronics
Allicdata Part #:

70T653MS10BCG-ND

Manufacturer Part#:

70T653MS10BCG

Price: $ 146.71
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 18M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 18Mb (512...
DataSheet: 70T653MS10BCG datasheet70T653MS10BCG Datasheet/PDF
Quantity: 1000
12 +: $ 133.37700
Stock 1000Can Ship Immediately
$ 146.71
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 18Mb (512K x 36)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Base Part Number: IDT70T653M
Description

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  • Memory - 70T653MS10BCG
  • Application Field

The application field of 70T653MS10BCG is in the computer industry as a high-density dynamic RAM (DRAM). This device 40-pin Dual In-line processor (DIP) which is a chip integrated with a 64-k × 16 bit memory. It is an industry standard, allowing for the connection of many of the same type of chips for larger amounts of memory such as graphics or sound. In industry, it is ideal for low-cost memory solutions such as with microcontrollers and other large memory applications.

This type of memory device is most often used in embedded systems and application-specific systems. It is also applicable to portable products, particularly those based on low power designs. These versatile devices are commonly utilized in communications, such as modems, LAN (Local Area Network) interfaces, data connections, and digital signal processing.

An example of a device that makes use of this DRAM would be the popular radio chip RTL8822BE. This chip has been designed for various applications such as Wi-Fi routers, access points, and other 802.11g/n networking products. This chip utilizes the 70T653MS10BCG DRAM to store its code, data and packet state tables.

  • Working Principle

The 70T653MS10BCG DRAM is a 8-bit asynchronous dynamic random access memory. It comprises a 64K word by 16 bits organisation matrix where each word can be accessed randomly and memory refresh times is not required. Instead, the memory refresh is done automatically by the device.

In terms of the operation of the device, it is based on a multiplexed address/data bus and utilizes the common 8-bit address bus and 8-bit multiplexed data bus. It requires a single +5V power supply in order to maintain a small input voltage swing while providing faster access time.

To access a word of memory, the address is presented and the enable signal is activated. Once the enable is activated, the memory begins to access the data from the address on the external address bus. The 8-bit data bus then shifts the desired data to the output in two distinct cycles as the enable signal is deactivated.

The 70T653MS10BCG is designed for minimum power consumption and hence features a minimum standby power mode for standby applications. This feature is essential in order to reduce the overall power demands of the device and consequently the thermal dissipation and heat generated. This mode draws the device\'s power from 1/3rd of the normal power level.

In summary, the 70T653MS10BCG DRAM is a convenient and versatile memory solution for low-power, small-scale applications. Its access speeds and low power consumption make it ideal for a range of embedded and application specific systems.

The specific data is subject to PDF, and the above content is for reference

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