70T659S10BFI Allicdata Electronics
Allicdata Part #:

70T659S10BFI-ND

Manufacturer Part#:

70T659S10BFI

Price: $ 93.88
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 208CABGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (12...
DataSheet: 70T659S10BFI datasheet70T659S10BFI Datasheet/PDF
Quantity: 1000
14 +: $ 85.34120
Stock 1000Can Ship Immediately
$ 93.88
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 4.5Mb (128K x 36)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)
Base Part Number: IDT70T659
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is one of the most important components of a computer. The quality and performance of a memory module depends largely on its design and the quality of parts involved. 70T659S10BFI is a type of DRAM (Dynamic Random Access Memory) part in the form of a 10-pin BGA (Ball Grid Array) package. It is designed to be used with a wide range of applications, from computing devices, video games, medical devices, and data storage. Although its specs may vary from brand to brand, the main features and characteristics remain the same across the board.

The 70T659S10BFI is a low-power but high-density memory module. It has a capacity of 8GB and operates at a maximum frequency of 533MHz. It is slower than the more popular DDR4 memory, but it is also more power-efficient. The memory module has a voltage rating of 1.2V, which is much lower than the 1.5V of DDR4, making it ideal for battery-operated devices.

The 70T659S10BFI has a low voltage of operation and low current consumption, making it very popular in embedded applications such as wearables and Internet of Things (IoT) devices. It is designed for low-power operations, so it can be used in systems that require frequent power cycling which reduces the overall system power consumption. This feature makes it suitable for systems with very limited power sources, such as battery-operated devices.

The 70T659S10BFI features a DDR3L architecture which uses two internal banks for data storage. This feature allows for increased memory bandwidth compared to the older DDR3 architecture. It also has an asynchronous refresh feature, which allows the memory to be refreshed during system idle cycles, reducing power consumption even further. The memory also has an ECC (Error Correction Code) feature to ensure data integrity.

The 70T659S10BFI also has a Thermal Sensor Package (TSP) that is designed to monitor the temperature of the memory module in order to protect it and other components from overheating. The TSP supports various thermal events such as a warning event, critical shut down event and thermal shut down event. The feature is especially important in small form factors, such as laptops or tablets, where space is limited.

In conclusion, the 70T659S10BFI is a low-power but high-density DRAM part with numerous features which make it suitable for many types of embedded applications. It offers excellent data integrity and efficient memory bandwidth. With its low power consumption, it is ideal for power-conscious systems, making it an ideal choice for many types of devices.

The specific data is subject to PDF, and the above content is for reference

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