A2G22S251-01SR3

Series:	--
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	1.805GHz ~ 2.2GHz
Gain:	17.7dB
Voltage - Test:	48V
Current Rating:	--
Noise Figure:	--
Current - Test:	200mA
Power - Output:	52dBm
Voltage - Rated:	125V
Package / Case:	NI-400S-2S
Supplier Device Package:	NI-400S-2S

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A2G22S251-01SR3 Application Field and Working Principle

A2G22S251-01SR3 is a type of field-effect transistor (FET), which is a particular type of transistor that has a high input impedance and uses electric field to control the current flow between its gate and source. Specifically, it is a type of metal-oxide-semiconductor field-effect transistor (MOSFET), wherein the electric field is used to modulate the electrical conductivity between the source and drain of the transistor. As such, it falls into the category of Radio-Frequency (RF) transistors since it is designed to work with high frequency signals.The A2G22S251-01SR3 is a high-power RF FET with a maximum output power of 150 watts, wide operating frequency up to 450MHz, and a Tri-Gate Structure. It is constructed with a combination of a gate-isolating nitride layer and a low parasitic capacitance package, which enables high efficiency operation at lower voltages than the standard packages. The wide dynamic bias range and the high gain flatness make it ideal for use in a wide range of applications.The Applications of A2G22S251-01SR3 are in RF systems such as radio systems, high-speed wireless data transmission, bird transmission systems, as well as a variety of industrial, military, and automotive applications. It can be used as an amplifier, switching device, or a high-frequency transistor in numerous electronic circuits.The A2G22S251-01SR3 works based on the simple principle of a field-effect transistor of varying the electric field between the source and the drain of the transistor, in order to control the flow of the current. With this arrangement, the voltage applied to the gate of the transistor can be used to modify the conductivity of the channel at the source and drain of the device. When a positive voltage is applied to the gate, it creates an electric field that attracts charges, allowing the current to flow between the source and the drain. Conversely, when a negative voltage is applied, the electric field repels the charges and the channel between the source and the drain is cut off.The use of the Tri-Gate Structure of A2G22S251-01SR3 further enhances the switching ability of the transistor. With this arrangement, three gates are used instead of two, and they are connected together in parallel. The advantage of this is that the cutoff voltage of the transistor is lower than that of a standard two-gate transistor and hence, the switching characteristic of the transistor is improved.In conclusion, A2G22S251-01SR3 is an ideal choice for RF systems where low parasitic capacitance and high efficiency are required. The wide operating frequency and the high output power make it suitable for many applications ranging from military, automotive, to wireless data transmission. Its Tri-Gate Structure allows for faster switching times and higher power output than the conventional two-gate transistors.

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