A2G26H280-04SR3

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A2G26H280-04SR3 is a high-frequency Field Effect Transistor (FET) from Comset Semiconductor. It is an enhancement mode RF transistor, which exhibits a high frequency operation with a dielectric constant of 16. The device is well matched with a standard 50 ohm system and is suitable for radio broadcast, wireless data communication and video applications.

A2G26H280-04SR3 is an enhancement mode transistor, which is mainly used for high frequency amplifiers and oscillators. It has a very wide frequency range, which can make it a suitable device for various RF applications. The transistor is composed of relatively small pieces of semiconductor material, which makes it ideal for high frequency operation.

The working principle of A2G26H280-04SR3 relies on the accumulation of charge carriers. When the device is connected to an external circuit, it forms an internal electric field, which causes the movement of charge carriers. This movement of charge carriers is known as an electric current, which is then used to amplify high frequency signals.

A2G26H280-04SR3 is capable of providing a high gain when connected to an RF amplifier, which makes it suitable for applications such as radio broadcast, wireless data communication and video. This device is relatively easy to use and has high frequency stability, which makes it a reliable and cost-effective solution for RF applications.

The A2G26H280-04SR3 is a highly versatile FET device, which can be used in a variety of applications. It is a reliable device with excellent performance, which makes it an ideal choice for many RF applications. The device is also easier to use than other FETs, as it requires fewer components to achieve the required level of performance.

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