A2G26H281-04SR3

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A2G26H281-04SR3 Transistor is a general-purpose RF Field-effect transistor (RF FET) that belongs to the family of MOSFETs (metal-oxide-semiconductor field-effect transistors). Below, we will delve into the concept of this device, its application fields, as well as its working principle.

Overview

The A2G26H281-04SR3 is a 600mA RF FET with drain source voltage range of 25V. It utilizes an N-channel layout and has a 5ohm Rds(on). This device is suitable for use in low-power, low-voltage applications, and it can be used to design and build amplifiers, modulators and transmitters.

The A2G26H281-04SR3 also features a typical Thermal Resistance of 2.5°C/W. This RF FET also has a Gate Source voltage drop of -0.5V and a build-in gate protection diode. In addition, its turn-on time is 3nsec max. Furthermore, the device has an operating temperature range of -55°C to +150°C.

Application Field

The A2G26H281-04SR3 is mainly used for biasing and low-power switching applications in the 25-450MHz frequency range. This device is suitable for switch, mixer and amplifier applications. It is also used in cellular application such as GSM and CDMA where it is typically configured as an amplifier DC channel. In addition, the device is also popular in FM transmitters and GPS receivers.

The main advantage of this FET is its low-voltage and low-power capabilities. Due to its high-transit frequency and low noise-figure (2 to 4dB) the A2G26H281-04SR3 is suitable for use in a wide-range of RF applications. Furthermore, this device can be found in a variety of consumer electronic devices, such as LCD TVs, set-top boxes and GPS units.

Working Principle

Like all other FETs, the A2G26H281-04SR3 makes use of the metal-oxide-semiconductor-effect in order to regulate current flow. In essence, the device consists of a conducting metal electrode (the "gate"), which is separated from the underlying semiconductor by a thin layer of oxide. By varying the voltage applied to the gate, an electric field is generated that is used to regulate the flow of current between the device\'s source and drain.

Unlike regular MOSFETs, the A2G26H281-04SR3 is designed to operate in the RF frequency range, which is why its gate-oxide-semiconductor junction is designed such that it has a low capacitance. This reduces the Miller effect, which can cause the device\'s transit frequency to degrade. Additionally, this device is also designed to have a low-noise level, which is essential for use in RF applications.

In a nutshell, the A2G26H281-04SR3 makes use of the metal-oxide-semiconductor effect in order to regulate current flow, while its design also ensures low-noise levels and superior transit frequencies. This makes it ideal for use in RF applications, such as cellular software, GPS receivers and FM transmitters.

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