Allicdata Part #: | ALD1115MAL-ND |
Manufacturer Part#: |
ALD1115MAL |
Price: | $ 1.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET N/P-CH 10.6V 8MSOP |
More Detail: | Mosfet Array N and P-Channel Complementary 10.6V ... |
DataSheet: | ALD1115MAL Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.52145 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N and P-Channel Complementary |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 1800 Ohm @ 5V |
Vgs(th) (Max) @ Id: | 1V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | 8-MSOP |
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.The ALD1115MAL is a dual low-saturation MOSFET array device that provides ideal solutions for broad applications such as power monitoring, motor control, protection circuits, and automotive applications. It operates in the enhancement mode, in which biasing of both drains and sources is necessary. This device can be used for a variety of purposes such as on/off switch, solid state contact switch, etc.
The ALD1115MAL is composed of two n-channel MOSFETs in a component package mounted in a silicon chip. It is encapsulated in an SOIC-8 package, with two terminals dedicated for each MOSFET. The drain to source voltage rating is from -20V to -60V, and the drain current is from 3A to 6A. The gate to source voltage rating is from -7V to -12V. It has a low saturation voltage of 0.22V, high threshold voltage of 7V, and a high break-down voltage of 12V.
The working principle of ALD1115MAL is based on the properties of n-channel MOSFETs. The n-channel MOSFET has a source terminal, a gate terminal, and a drain terminal. When a voltage is applied to its gate terminal, current can flow through it from its source to its drain. This process is known as the MOSFET’s enhancement mode. Applying a voltage to the gate causes positive charge carriers (holes) to accumulate in the channel between the source and the drain. This accumulation of holes creates an electric field that modulates the flow of current through the channel. In this way, the gate voltage controls the current flow from the source to the drain.
The drain voltage (VDS) and drain current (ID) in MOSFETs are related according to the following equation: ID = K(VGS - VT)2, where VGS is the gate to source voltage, VT is the threshold voltage, and K is a constant of proportionality. This equation suggests that the drain current is proportional to the square of the gate to source voltage. Thus, the ALD1115MAL can be used beneficially to achieve a desired current regulation.
The ALD1115MAL is a low-saturation MOSFET array device with numerous advantages in a variety of applications. Its low saturation voltage, high threshold voltage, and high break-down voltage make it a versatile and practical device for power monitoring, motor control, protection circuits, and automotive applications. Additionally, its ease of use and relatively low cost helps make it an ideal product for those seeking a reliable, efficient solution for their applications.
The specific data is subject to PDF, and the above content is for reference
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