Allicdata Part #: | 1014-1027-ND |
Manufacturer Part#: |
ALD110808SCL |
Price: | $ 2.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 4N-CH 10.6V 16SOIC |
More Detail: | Mosfet Array 4 N-Channel, Matched Pair 10.6V 12mA,... |
DataSheet: | ALD110808SCL Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.02142 |
Series: | EPAD® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 4 N-Channel, Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | 12mA, 3mA |
Rds On (Max) @ Id, Vgs: | 500 Ohm @ 4.8V |
Vgs(th) (Max) @ Id: | 820mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 16-SOIC |
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:The ALD110808SCL is a part of the family of FET (Field Effect Transistor) arrays that are designed to meet the rigorous demands of high-speed, high-voltage applications. It is specifically tailored to operate in a wide range of application fields, including telecom, industrial automation, and other mission-critical systems. This family includes two FETs connected in parallel to provide the highest possible level of performance in terms of current flow, voltage operation, and reliability.
The ALD110808SCL utilizes a DE-MOSFET (Drain-Gate-Source Field Effect Transistor) architecture that enables higher frequency operation compared to other FETs. The DE-MOSFET architecture consists of two FETs connected in parallel. Since the FETs are complementary in nature, one FET is responsible for controlling positive voltages (N channel) while the other FET is responsible for controlling negative voltages (P channel). With the assistance of this bi-directional FET architecture, the ALD110808SCL can provide improved frequency capabilities up to 70 MHz with a increased efficiency.
The working principle of the ALD110808SCL is quite straightforward. When a voltage is applied to the gate of the DE-MOSFET, the FETs will become activated and start conducting. The amount of current that can be conducted through the FETs is determined by the voltage that is applied to the gate. Higher gate voltages will result in higher current flow, and lower gate voltages will result in lower current flow. When the voltage is removed, the FETs will be deactivated and the current flow will stop.
The ALD110808SCL is designed to operate in a wide range of applications that demand fast switching speeds and high current carrying capabilities. It is ideal for use in power supply and switching applications due to its high operating speed and low power dissipation. This can help reduce power dissipation, which can be very beneficial in many applications. It is also suitable for use in medical equipment, telecom systems, industrial automation systems, and many other applications that require high frequencies and precise switching control.
In summary, the ALD110808SCL is a powerful, fast, and efficient FET array that offers superior performance in a range of applications. It utilizes a DE-MOSFET architecture, enabling higher frequency operation and improved efficiency. With the help of this unique FET architecture, the ALD110808SCL can provide improved margins in terms of current flow, voltage operation, and reliability. The ALD110808SCL is ideal for use in telecom, industrial automation, and other mission-critical applications that demand fast switching speeds and high current carrying capabilities.
The specific data is subject to PDF, and the above content is for reference
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