ALD110804SCL Allicdata Electronics
Allicdata Part #:

1014-1023-ND

Manufacturer Part#:

ALD110804SCL

Price: $ 3.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Advanced Linear Devices Inc.
Short Description: MOSFET 4N-CH 10.6V 16SOIC
More Detail: Mosfet Array 4 N-Channel, Matched Pair 10.6V 12mA,...
DataSheet: ALD110804SCL datasheetALD110804SCL Datasheet/PDF
Quantity: 2
1 +: $ 2.74050
10 +: $ 2.44503
100 +: $ 2.00504
500 +: $ 1.62361
1000 +: $ 1.36931
Stock 2Can Ship Immediately
$ 3.02
Specifications
Series: EPAD®
Packaging: Tube 
Part Status: Active
FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Description

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The ALD110804SCL is an array of four N-channel enhancement-mode silicon gate power field effect transistors (FETs) used in a variety of different applications. It is often seen used in digital switching circuits, DC and AC power switching circuits, and linear integrated circuits.

The ALD110804SCL is a four-transistor array, meaning it contains four individual transistors connected in series. The four transistors are connected to each other by four interconnecting pins which provide input and output signals. Each transistor is a type-N-channel enhancement-mode silicon gate FET, meaning that it has four terminals: the source (S), the drain (D), the gate (G), and the substrate (SB). The source and drain pins are used to control the current flow through the transistor and the gate pin is used to control the voltage of the drain and source pins. The substrate pin is used to connect the transistor to the integrated circuit.

The ALD110804SCL has two operating modes. The first is the enhancement mode which is used when the gate voltage is positive with respect to the substrate voltage. In this mode, the transistor is fully “on” and will allow current to flow between the source and drain pins. The enhancement mode is often used in digital circuitry such as digital switching circuits and AC and DC power switching circuits.

The second operating mode is the depletion mode. This is used when the gate voltage is negative with respect to the substrate voltage. In this mode, the transistor is fully off and will not allow current to flow between the source and drain pins. The depletion mode is often used in linear integrated circuits, where the transistors are used to regulate the amount of current flowing through the circuit.

One of the main advantages of the ALD110804SCL is its flexibility. It can be used in a variety of applications, from digital switching circuits to linear integrated circuits. Additionally, it provides a high performance and can be used in industrial and consumer applications. The range of operating voltages that the ALD110804SCL can handle is also quite considerable, from 2V to 18V.

In summary, the ALD110804SCL is an array of four type-N-channel enhancement-mode FETs that can be used in digital switching circuits, AC and DC power switching circuits and linear integrated circuits. Its two operating modes, enhancement and depletion, can provide high performance and flexibility in a range of operating voltages from 2V to 18V.

The specific data is subject to PDF, and the above content is for reference

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