
Allicdata Part #: | 1014-1220-ND |
Manufacturer Part#: |
ALD111910PAL |
Price: | $ 1.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 2N-CH 8DIP |
More Detail: | Mosfet Array |
DataSheet: | ![]() |
Quantity: | 1000 |
50 +: | $ 1.23165 |
Series: | -- |
Packaging: | -- |
Part Status: | Active |
FET Type: | -- |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
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A range of components is used for different applications in many industries. The ALD111910PAL is one such component, belonging to the family of transistors/FETs/MOSFETs/ARRAYS. In this article, we shall understand the application field and working principle of ALD111910PAL.
The ALD111910PAL is a Fet/MOSFET/Array IC or Integrated Circuit that has been specifically developed by Analog Devices, Inc. It is a HETEROSTRUCTURE FIELD EFFECT TRANSISTOR that has been developed to provide accurate switching behavior in the form of a fast self-biased operational amplifier. This is the major application field of the ALD111910PAL.
The ALD111910PAL is a high-speed, high-frequency, high-voltage, low-power transistor that can operate in the range of 1 Giga Hertz to 20 Giga Hertz and can be used in a wide range of applications including power amplifiers for high speed signal transmission and for the purpose of high speed DRAM control. The operating temperature of this transistor is -40℃ to 125℃ which enables it to be used in demanding applications that require high temperature performance.
In terms of its working principle, the ALD111910PAL is a single gate, feedback trans-conductance switching device with two dual gate FETs or Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs). The two FETs in the ALD111910PAL are connected in series between the drain and source terminals, and this enables the device to switch fast loads with extremely low voltage drop. The device is fabricated with 0.1µm thick epitaxial silicon substrate and has excellent noise immunity, and is also RoHS compliant.
As a result of its high speed, low voltage drop and high temperature performance capabilities, the ALD111910PAL is suitable for applications such as high data rate communication systems, RF/microwave amplifiers, high-power digital logic, and switching circuitry for radar and medical imaging equipment.
To summarize, the ALD111910PAL is an IC belonging to the family of transistors/FETs/MOSFETs/ARRAYS which is used for precise switching applications. It is a single gate, feedback trans-conductance switching device with two dual gate FETs. This device is suitable for applications such as high data rate communication systems, RF/microwave amplifiers, high-power digital logic, and switching circuitry for radar and medical imaging equipment. Thanks to its exceptional features, the ALD111910PAL is capable of providing accurate and reliable performance which makes it suitable for use in a wide range of industries.
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