Allicdata Part #: | ALD1110ESAL-ND |
Manufacturer Part#: |
ALD1110ESAL |
Price: | $ 3.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 2N-CH 10V 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) Matched Pair 10V ... |
DataSheet: | ALD1110ESAL Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.75486 |
Series: | EPAD® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 500 Ohm @ 5V |
Vgs(th) (Max) @ Id: | 1.01V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
Power - Max: | 600mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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ALD1110ESAL is an array of complementary FETs with higher performance, lower on-resistance, and better power efficiency than standard FETs. It is designed for use in high end applications such as power management, switching, and load control. This FET array has multiple channels which can be operated independently for greater flexibility and improved system efficiency.
ALD1110ESAL comprises N-type and P-type FETs which operate in a complementary fashion. This means that when one FET is turned on, the other is turned off, and vice versa. This allows the device to operate with high efficiency and reduce the amount of power dissipated in switching operations. The FETs have very low on-resistance and exteremely low gate charge. This allows them to be directly driven by logic circuits and minimize power loss.
In addition to being used in switching and power management applications, the ALD1110ESAL can be used in a variety of sensing and control applications. The device can be used as an overcurrent or overvoltage protection circuit, or to detect temperature. It can also be used as a switch or an indicator/actuator. The array has a built-in diode to help protect the FETs from reverse voltages and transient voltages.
The ALD1110ESAL can also be used in analog circuits for data conversion, for example to convert a low-frequency signal into a high-frequency signal, or to accurately measure analog signals. The device has multiple symmetric source and drain connections which allow it to be operated in a variety of configurations.
The ALD1110ESAL is designed for use in applications that require high-frequency switching and accurate signal conversion. The array has been tested for performance in a variety of applications and found to perform well under high-frequency and high-current loads. The device is capable of switching up to 4A of current and has a fast on-resistance at high frequencies, making it ideal for use in high-frequency switching circuits.
The ALD1110ESAL is a versatile FET array which can be used in a wide range of applications. It has low on-resistance, allowing it to be operated directly by logic circuits, and high switching performance, making it suitable for high-frequency switching applications. The array has symmetric source and drain connections, enabling a wide range of configurations, and the built in diode ensures protection from reverse and transient voltages. With its versatile design and high performance, the ALD1110ESAL is an ideal choice for sophisticated power management, switching, and signal conversion applications.
The specific data is subject to PDF, and the above content is for reference
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