Allicdata Part #: | AOB10B60D-ND |
Manufacturer Part#: |
AOB10B60D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | IGBT 600V 20A 163W TO263 |
More Detail: | IGBT 600V 20A 163W Surface Mount TO-263 (D2Pak) |
DataSheet: | AOB10B60D Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | Alpha IGBT™ |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 20A |
Current - Collector Pulsed (Icm): | 40A |
Vce(on) (Max) @ Vge, Ic: | 1.8V @ 15V, 10A |
Power - Max: | 163W |
Switching Energy: | 260µJ (on), 70µJ (off) |
Input Type: | Standard |
Gate Charge: | 17.4nC |
Td (on/off) @ 25°C: | 10ns/72ns |
Test Condition: | 400V, 10A, 30 Ohm, 15V |
Reverse Recovery Time (trr): | 105ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
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Introduction
AOB10B60D is an insulated gate bipolar transistor (IGBT) which is a single device with first-generation characteristics. It consists of an emitter, a collector, a gate and a base. In addition, the current flow is bidirectional and it can operate confidently up to 600 volts.
Application Field
The AOB10B60D is suitable for a variety of applications such as motor control, UPS, drilling machines, delay timer, welding machines, wind turbines, solar inverters, automated welding systems and much more. The device is also efficient for AC input voltage applications.
Working Principle
The AOB10B60D uses the principle of bipolar technology. This transistor is basically a combination of two components: a n-type transistor (MOSFET) and a p-type transistor (bipolar). The gate of the n-type is connected to the collector of the p-type and the emitter of the n-type is connected to the emitter of the p-type. This way, the current can travel both ways between the collector and the emitter.
In a bipolar transistor, the current flowing between the base and the collector causes an inversion layer to form at the base-collector junction. The inversion layer allows electrons to move from the collector to the base. This in turn causes a voltage drop, which is created between the base and the collector.
The MOSFET component of the AOB10B60D works similar way as bipolar transistors. The gate of the MOSFET acts as an insulating layer which prevents current from travelling between the source and the drain. To apply current, a voltage is applied to the gate and this voltage pulls the electrons away from the insulator. This causes the current to flow between the source and the drain.
Conclusion
The AOB10B60D offers superior performance when used in power applications. Its characteristic of bidirectional current flow and higher voltage capability make it suitable for a wide range of applications. This IGBT can be used in motor control, UPS, drilling machines, welding machines, wind turbines, solar inverters, and automated welding systems among others.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
AOB10B60D | Alpha & ... | -- | 1000 | IGBT 600V 20A 163W TO263I... |
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AOB10T60PL | Alpha & ... | 0.0 $ | 1000 | MOSFET N-CH 600V 10A TO26... |
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AOB12N50L | Alpha & ... | -- | 1000 | MOSFET N-CH 500V 12A TO26... |
AOB1608L | Alpha & ... | -- | 1000 | MOSFET N-CH 60V 11A TO263... |
AOB11S60L | Alpha & ... | -- | 1000 | MOSFET N-CH 600V 11A TO26... |
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