AOB10B60D Allicdata Electronics
Allicdata Part #:

AOB10B60D-ND

Manufacturer Part#:

AOB10B60D

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: IGBT 600V 20A 163W TO263
More Detail: IGBT 600V 20A 163W Surface Mount TO-263 (D2Pak)
DataSheet: AOB10B60D datasheetAOB10B60D Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: Alpha IGBT™
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 40A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
Power - Max: 163W
Switching Energy: 260µJ (on), 70µJ (off)
Input Type: Standard
Gate Charge: 17.4nC
Td (on/off) @ 25°C: 10ns/72ns
Test Condition: 400V, 10A, 30 Ohm, 15V
Reverse Recovery Time (trr): 105ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Description

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Introduction

AOB10B60D is an insulated gate bipolar transistor (IGBT) which is a single device with first-generation characteristics. It consists of an emitter, a collector, a gate and a base. In addition, the current flow is bidirectional and it can operate confidently up to 600 volts.

Application Field

The AOB10B60D is suitable for a variety of applications such as motor control, UPS, drilling machines, delay timer, welding machines, wind turbines, solar inverters, automated welding systems and much more. The device is also efficient for AC input voltage applications.

Working Principle

The AOB10B60D uses the principle of bipolar technology. This transistor is basically a combination of two components: a n-type transistor (MOSFET) and a p-type transistor (bipolar). The gate of the n-type is connected to the collector of the p-type and the emitter of the n-type is connected to the emitter of the p-type. This way, the current can travel both ways between the collector and the emitter.

In a bipolar transistor, the current flowing between the base and the collector causes an inversion layer to form at the base-collector junction. The inversion layer allows electrons to move from the collector to the base. This in turn causes a voltage drop, which is created between the base and the collector.

The MOSFET component of the AOB10B60D works similar way as bipolar transistors. The gate of the MOSFET acts as an insulating layer which prevents current from travelling between the source and the drain. To apply current, a voltage is applied to the gate and this voltage pulls the electrons away from the insulator. This causes the current to flow between the source and the drain.

Conclusion

The AOB10B60D offers superior performance when used in power applications. Its characteristic of bidirectional current flow and higher voltage capability make it suitable for a wide range of applications. This IGBT can be used in motor control, UPS, drilling machines, welding machines, wind turbines, solar inverters, and automated welding systems among others.

The specific data is subject to PDF, and the above content is for reference

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