AOB12N50L

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AOB12N50L Application Field and Working Principle

The AOB12N50L, or Advanced Oxide Based Mosfet (AOBM), is a new type of power field effect transistor (FET) developed by STMicroelectronics for power MOSFETs. It is part of the company\'s Advanced Oxide Field Effects Transistor (AOFET) series, which is designed for high efficiency, high switching frequencies and low on-resistance applications.

The AOB12N50L is a single enhancement-mode, vertical Power MOSFET, designed for use in on-state and off-state power conversion applications. It combines the high drain-source breakdown voltage capability of a Standard P-Channel MOSFET and the current carrying capacity of a Serial Power MOSFET. The device is available in a variety of sizes and packages, including the TO-220, TO-220FS, TO-263 and SOIC packages.

The AOB12N50L is primarily used in a wide range of switched-mode power supply (SMPS) applications. In particular, it is used in the output stage of DC-DC converters, in the input stage of ac-dc converters, and in various high frequency switching applications

The working principle of the AOB12N50L is based on the basic FET configuration. At the heart of the transistor is the N-channel or P-channel MOSFET, which is composed of a gate, a body, and a source-drain channel. The body is normally connected to the source terminal, while the gate is floating above the body. When a small voltage applied to the gate, it creates an inversion layer, which allows current flow through the channel and thus acts as a switch in the FET.

The voltage applied to the gate is known as the gate-source voltage (V GS ). The amount of current that flows through the channel when V GS is applied is known as the drain-source current (I DS ). When V GS is lower than the threshold voltage, V TH , the transistor is off, and there is no current flow. On the other hand, when V GS is higher than the threshold voltage, I DS increases, and the FET acts as a switch allowing current to flow through it.

The AOB12N50L utilizes the conventional FET configuration, but with improved gate oxide materials and gate design. This allows for higher drain-source breakdown voltage, higher switching speeds and higher current carrying capacity. The AOB12N50L also features a lower on-resistance than its predecessors, making it a great choice for high frequency switching applications.

In conclusion, the AOB12N50L is a single enhancement-mode, vertical Power MOSFET developed by STMicroelectronics, primarily used in switched-mode power supplies. It is designed to provide higher drain-source breakdown voltage, higher switching speeds and a lower on-resistance than other power FETs. The device uses conventional FET configuration but with improved oxide materials and gate designs to offer superior performance.

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