AOB15B65M1 Discrete Semiconductor Products |
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Allicdata Part #: | 785-1734-2-ND |
Manufacturer Part#: |
AOB15B65M1 |
Price: | $ 0.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | IGBT 650V 30A TO263 |
More Detail: | IGBT 650V 30A 214W Surface Mount TO-263 (D2Pak) |
DataSheet: | AOB15B65M1 Datasheet/PDF |
Quantity: | 800 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
800 +: | $ 0.67623 |
1600 +: | $ 0.62059 |
2400 +: | $ 0.57779 |
Series: | Alpha IGBT™ |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 30A |
Current - Collector Pulsed (Icm): | 45A |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 15A |
Power - Max: | 214W |
Switching Energy: | 290µJ (on), 200µJ (off) |
Input Type: | Standard |
Gate Charge: | 32nC |
Td (on/off) @ 25°C: | 13ns/116ns |
Test Condition: | 400V, 15A, 20 Ohm, 15V |
Reverse Recovery Time (trr): | 317ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The AOB15B65M1 is a single, Insulated Gate Bipolar Transistor (IGBT) that is widely used as a switching electronic component in a variety of electronic devices. It is a component of a wide variety of electronic products, including cell phones, automotive systems, consumer electronics, office automation, and telecommunications.
The AOB15B65M1 is an efficient component designed for industrial, consumer, and automotive applications. It has a maximum collector current of 15A and operates at a maximum blocking voltage of 650V DC. The large current and voltage ratings make it an ideal component to switch, amplify, and regulate power and current in these types of applications. The device features high speed switching capability and has gate-driven turn-on and collector-driven turn-off. The device also features a low-inductance design and an optimized gate-to-collector junction.
The working principle of the AOB15B65M1 is simple. When power is applied to the gate, it causes the charge carriers to create a channel between the collector and the emitter. This causes current to flow freely between the two and electrical energy is transferred from the collector to the emitter. As the current flows, the voltage across the collector and the emitter is increased, which causes the device to turn on. When the voltage across the collector and the emitter reaches its maximum, the transistor turns off.
The AOB15B65M1 is a single IGBT with various industrial, consumer, and automotive applications which offer the ease of use and reliability. The device is designed for high-speed operation and its low-inductance design and optimized gate-to-collector junction provide maximum efficiency and minimum power loss. It is an ideal component to switch, amplify, and regulate power and current in these types of applications and can provide reliable, robust, and cost-effective solutions.
The specific data is subject to PDF, and the above content is for reference
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