AOB10N60L Discrete Semiconductor Products |
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Allicdata Part #: | 785-1541-2-ND |
Manufacturer Part#: |
AOB10N60L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 10A TO263 |
More Detail: | N-Channel 600V 10A (Tc) 250W (Tc) Surface Mount TO... |
DataSheet: | AOB10N60L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D²Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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AOB10N60L is a silicon-based MOSFET that belongs to the family of insulated-gate field-effect transistors (IGFETs). It is the most widely used power MOSFET in modern VLSI circuits and is available in a variety of packaging styles such as TO-3, DPAK-dual, DIP-dual, quad, and hex. The device is mainly used for switching applications, where it is connected to a gate drive circuit to control the conduction of the source and drain terminals.
The AOB10N60L device uses a p-channel MOSFET construction, which means that the gate-source region is insulated from the main conduction channel. This insulation is achieved by an oxide layer that forms between the gate and the semiconductor material. This oxide layer allows the MOSFET to be controlled by an externally applied voltage. When the gate voltage is higher than the source voltage, the insulated gate is positively biased and a large current can flow through the device.
The device has a very low forward voltage drop, which makes it suitable for applications requiring high efficiency and low power loss. The resistance between the source and the drain is also very low, which allows the device to operate at high frequencies. It can handle high power levels and is compatible with a wide range of loads, including inductive and capacitive loads.
The device has a few important characteristics that should be taken into account when selecting an AOB10N60L device. The first is the maximum Drain-source voltage, which is the maximum voltage that can be applied to the drain-source terminal to guarantee normal operation. The second is the maximum drain current, which is the maximum current that can pass through the device without damaging it. Finally, the maximum power dissipation is the maximum power that the device can dissipate without being damaged.
In terms of its application field, the AOB10N60L device is mainly used in various applications such as motor control, power supplies, UPS systems, and switching power control. It is also used in DC-DC converters and AC-DC converters. The main advantages of the device are its low voltage drop, low resistance between the source and the drain, and its compatibility with wide input and output voltages.
In conclusion, the AOB10N60L is an excellent device for a variety of applications. It has a low forward voltage drop, a low resistance between the source and the drain, and it can handle wide input and output voltages. The device is ideal for motor control, power supplies, UPS systems, and power control applications. It is also compatible with a wide range of loads, including inductive and capacitive loads.
The specific data is subject to PDF, and the above content is for reference
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