AOB11S65L Allicdata Electronics

AOB11S65L Discrete Semiconductor Products

Allicdata Part #:

785-1542-2-ND

Manufacturer Part#:

AOB11S65L

Price: $ 1.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 650V 11A TO263
More Detail: N-Channel 650V 11A (Tc) 198W (Tc) Surface Mount TO...
DataSheet: AOB11S65L datasheetAOB11S65L Datasheet/PDF
Quantity: 1000
800 +: $ 0.93108
Stock 1000Can Ship Immediately
$ 1.04
Specifications
Series: aMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 399 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 100V
FET Feature: --
Power Dissipation (Max): 198W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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The AOB11S65L is a high-temperature, N-channel power MOSFET transistor. It features a horizontally mounted insulated-gate FET built on an epitaxial layer on silicon substrate, using a trademarked semiconductor process (SOMOS(R)).The AOB11S65L offers reliable switching performance in a high temperature environment, making this an ideal choice for automotive, industrial, and power electronics applications. This article will discuss the application field and working principle of the AOB11S65L.

The AOB11S65L has a maximum continuous drain-source voltage of 500V, a maximum continuous drain current of 11A, and a maximum continuous power of 65W. This makes the AOB11S65L suitable for a variety of automotive, industrial, and power electronics applications. For example, the AOB11S65L can be used in electric motor controllers, switch mode power supplies, automotive lighting systems, and home appliances. The AOB11S65L is also suitable for applications where a high working temperature is expected, such as automotive engine control systems, where temperatures can reach up to 150C. The AOB11S65L is designed to operate up to a maximum temperature of 175C, making it ideal for these types of applications.

The AOB11S65L is an insulated-gate FET that operates by using an electrical field to control the current flow through the device. This type of transistor is also known as a “metal-oxide-semiconductor field-effect transistor” or MOSFET. The construction of the AOB11S65L consists of a gate sitting between a source and a drain, both of which are connected to an electrode. The gate voltage is used to adjust the electric field between the source and the drain, which in turn controls the current that is allowed to flow through the device. When a positive voltage is applied to the gate, electrons are attracted to the gate, resulting in a current flow through the drain. When a negative voltage is applied to the gate, the electrons are repelled from the gate, resulting in a reduction of current flow through the device.

The AOB11S65L is an ideal candidate for a variety of automotive, industrial, and power electronics applications. The device offers reliable switching performance in a high temperature environment, making it an excellent choice for applications where temperatures may reach high levels. Combined with its ability to handle high voltage and current levels, the AOB11S65L is an ideal choice for these types of applications.

The specific data is subject to PDF, and the above content is for reference

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