AOB11S60L Discrete Semiconductor Products

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AOB11S60L is a vertical N-channel dual-gate MOSFET device. It is fit for various applications from low-noise amplifier to preamplifier, from high-speed broadband amplifier to bandpass filter, from impedance matching to cable television coaxial amplifier. It has high breakdown voltage and wide operating temperature range, and also provides stable RF performance and low noise.

The working principle of AOB11S60L is based on the capacitance-coupled voltage division and gate injection level shift technique. It has two dual-gate MOSFET channels, and each gate has a separate gate bias circuit. The first gate is the input gate, and the second gate is the output gate, which operates as an drain-probe regulator. This arrangement provides an efficient and linear RF signal transfer. In addition, AOB11S60L also provides an integrated impedance match circuit, which makes the device suitable for all kinds of high frequency applications.

The main applications of AOB11S60L include high-speed broadband amplifier, low-noise amplifier, preamplifier, bandpass filter, cable television coaxial amplifier, impedance matching, etc. AOB11S60L has excellent linearity and high gain, which makes it ideal for applications such as digital television broadcasting and satellite communications communication, as well as high speed wideband transmissions.

AOB11S60L is a dual-gate MOSFET that is suitable for various applications. It works on the principle of capacitance-coupled voltage division and gate injection level shift technique with two dual-gate MOSFET channels and an built-in impedance mismatch circuit depending on the application. It has high breakdown voltage and wide operating temperature range, and provides stable RF performance and low noise. Major applications of AOB11S60L include high-speed broadband amplifier, low-noise amplifier, preamplifier, bandpass filter, cable television coaxial amplifier, impedance matching, etc.

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