Allicdata Part #: | AOB11C60L-ND |
Manufacturer Part#: |
AOB11C60L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 11A TO263 |
More Detail: | N-Channel 600V 11A (Tc) 278W (Tc) Surface Mount TO... |
DataSheet: | AOB11C60L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D²Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 278W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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AOB11C60L is a type of field-effect transistor (FET) and metal-oxide-semiconductor FET (MOSFET). It is a single MOSFET, meaning that it has only one gate. AOB11C60L is an N-type MOSFET, meaning that it is designed to carry current in an N-type material.
Unlike traditional transistors, FETs do not require a direct current to control the flow of current. Instead, a small electric field generated by the gate is used to controll the current conductivity of the transistor. A voltage applied to the gate is used to control the resistance between the source and the drain of the component.
This type of transistor is used in many electronics applications like circuit switching, power amplifiers and power supplies. It is also popular for use in areas like communications and digital signal processing (DSP) where it can provide high speed on/off switching performance. In these applications, the FET is utilized to close or open a connection eventually to control a number of signals.
AOB11C60L is specifically designed for use in high-tech electronic devices. It is able to handle relatively large currents and is suitable for high break-down voltage and low saturation voltage applications. It has excellent switching characteristics and has high power handling capability.
The main working principle of the AOB11C60L is the same as that of a traditional transistor. When voltage is applied to the gate, it will affect the electric field in the transistor. This electric field is the controlling factor in determining the resistance between the source and the drain. When the gate voltage is increased, the resistance between the source and the drain decreases, leading to increased current flow through the transistor.
The AOB11C60L is simple to use since it is designed for low power operation. However, it is an efficient component and is suitable for large scale applications. It is also robust enough to handle harsh environmental conditions.
In conclusion, the AOB11C60L is an excellent choice for use in high tech applications. Its simple design and low power consumption make it a popular choice. It is suitable for applications where high switching speed and high power handling capacity are required. It is also reliable and robust enough to handle harsh environmental conditions.
The specific data is subject to PDF, and the above content is for reference
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