Allicdata Part #: | AOC2401-ND |
Manufacturer Part#: |
AOC2401 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 30V 3A 4WLCSP |
More Detail: | P-Channel 30V 3A (Ta) 550mW (Ta) Surface Mount 4-A... |
DataSheet: | AOC2401 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
Package / Case: | 4-SMD, No Lead |
Supplier Device Package: | 4-AlphaDFN (1.57x1.57) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 550mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1327pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 41 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The AOC2401 MOSFET is a metal-oxide-semiconductor field-effect transistor (MOSFET) with a drain-source resistance of 200 milliohms. It is a single-gate type of MOSFET, meaning that it has only one gate electrode that controls the drain-to-source current flow. This device is typically used as a switch or a voltage-controlled resistor, allowing for the adjustment of the drain-to-source correction based on a control voltage.
The AOC2401 MOSFET is ideal for applications that require low-power switches and high-impedance resistors. It can be used in a variety of applications, such as automotive and industrial electronics. Additionally, it can be used to control motor speed, to regulate voltage and current for LED dimming, and to provide a precision power source for microcontrollers.
The AOC2401 MOSFET also offers good immunity to electrostatic discharge and protection against RF interference. This makes it ideal for controlling signals in highly-sensitive electronic assemblies and in applications that require immunity to electrostatic charge. This device is also well-suited for use in wireless communication systems, such as Bluetooth and Wi-Fi, because of its capability to filter out unwanted background noise.
The working principle of the AOC2401 MOSFET is based on metal-oxide semiconductor technology. The MOSFET comprises a metal (gate) electrode, an oxide layer, and a semiconductor channel. When a voltage is applied to the gate electrode, it creates a potential barrier between the oxide layer and the semiconductor channel. This barrier prevents the flow of electrons between the channel and the oxide layer, thus allowing a current to flow across the channel.
The AOC2401 MOSFET also offers high switching speeds and wide input voltage ranges. It is designed to operate at up to 15V, and switching speeds up to 10kHz. Additionally, the device features a low gate threshold voltage and fast turn-on/off times. This is beneficial for switching applications that require a quick transition from one voltage state to another.
The AOC2401 MOSFET is a versatile semiconductor device that is widely used for a variety of applications. It offers reliable performance, high-speed switching, and low power consumption, making it an ideal choice for a variety of designs. Furthermore, its ability to filter out unwanted noise makes it well-suited for use in wireless communication systems.
The specific data is subject to PDF, and the above content is for reference
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