AOC2414

Vgs(th) (Max) @ Id:	800mV @ 250µA
Package / Case:	4-SMD, No Lead
Supplier Device Package:	4-AlphaDFN (1.57x1.57)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	550mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2042pF @ 4V
Vgs (Max):	±5V
Gate Charge (Qg) (Max) @ Vgs:	32nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	19 mOhm @ 1.5A, 2.5V
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 2.5V
Current - Continuous Drain (Id) @ 25°C:	4.5A (Ta)
Drain to Source Voltage (Vdss):	8V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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AOC2414 is an insulated-gate field effect transistor (IGFET) designed for a variety of applications. It is a type of field-effect transistor (FET), and is classified as a single insulated-gate FET (MOSFET). The AOC2414 is a low-voltage N-channel enhancement mode MOSFET, specifically designed for the applications where low gate threshold and low voltage operation (3V typical) are desired. Due to its low thermal resistance, it is ideal for heat-sensitive applications.Application and Working PrincipleThe AOC2414 is an ideal solution for high frequency switching circuits as it can switch rapidly, and it offers low gate-to-drain capacitance to reduce switching power dissipation. The device can also be used as a charge pump amplifier, rectifier high frequency circuits, voltage level shifters, power switches, and linear attenuators. It is also used in audio applications such as low noise pre-amplifiers, transistor level control circuits, and input amplifiers.In operation, the gate\'s conduction state is controlled by the voltage applied to the gate terminal, through a voltage controlled capacitance between the gate and the surface channel of the device. When the gate voltage is higher than the threshold voltage (V_th), the capacitance increases and a depletion layer is formed in the channel. This layer restricts the flow of electrons from the source to the drain and the device is turned on. The conduction of this device depends on the current flowing between the source and the drain. This current is regulated by the electrical field created by the gate voltage.Characteristics and PerformanceThe AOC2414 has a power dissipation rating (PD) of 345mW, and a maximum drain-to-source current (ID) of 2.9A. It has a single on-state resistance (R_D(on)) of 40mΩ and a low gate charge of 4.5nC. It also has a forward transconductance (gm) of 4.1mS, a maximum breakdown voltage (VBSThe specific data is subject to PDF, and the above content is for reference

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