Allicdata Part #: | AOD210-ND |
Manufacturer Part#: |
AOD210 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 70A TO252 |
More Detail: | N-Channel 30V 23A (Ta), 70A (Tc) 2.7W (Ta), 150W (... |
DataSheet: | AOD210 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.7W (Ta), 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Ta), 70A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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AOD210 is a silicon-semiconductor device, with a three-terminal structure such as Gate, Drain, and Source. It is called an Enhancement-type Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The specific model used in this application is the AOD210 series, which are vertical structure devices with low ON-resistance and self-aligned source and drain contacts.
AOD210 is a power metal-oxide semiconductor field-effect transistor (MOSFET). It offers the advantage of higher current capabilities and greater switching speeds than conventional bipolar transistors. AOD210 operates by using the electrical field created by the gate voltage on its gate terminal to regulate the current flowing from the source to the drain.
Usually, FETs are used for switching and amplifying electronic signals in integrated circuits. In the case of AOD210, it is mainly used for providing power supply to high current loads such as motors, lights and other electronic applications. With its well-defined and self-aligned source and drain contacts, it makes it suitable for the most demanding high side switching applications. It can achieve low-loss operations at higher currents and reduce the design costs and time due to its on-chip thermal management.
The working principle of AOD210 can be described as follows: when a small voltage is applied to the metallic oxide gate terminal, an electric field is induced between the source and drain electrodes. This electric field controls the source and drain current by the strength of the electric field. When a higher voltage is applied, the electric field’s ability to control the current increases, resulting in lower drain-source voltage and current. As a result, it can provide higher current and higher switching speed.
In applications, AOD210 works as a switch to control the flow of charge carriers from the source to the drain. It acts as a variable resistor, with the electric field strength controlling the resistance of the channel, which in turn controls the drain-source current. AOD210 can be used in any application where current needs to be switched on and off. This includes power converters and motor drivers, as well as in switch-mode power supplies and DC-DC converters. AOD210 is also suitable for any high-end application that requires high current control and high switching speeds.
To sum it up, AOD210 is a power metal-oxide semiconductor field-effect transistor (MOSFET) with a three-terminal structure such as Gate, Drain, and Source. It is mainly used for providing power supply to high current loads and can be used in any application where current needs to be switched on and off. The working principle of AOD210 involves using the electric field created by the gate voltage on its gate terminal to regulate the current flowing from the source to the drain.
The specific data is subject to PDF, and the above content is for reference
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