AOD2610_002 Allicdata Electronics
Allicdata Part #:

AOD2610_002-ND

Manufacturer Part#:

AOD2610_002

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 60V TO-252
More Detail: Surface Mount TO-252, (D-Pak)
DataSheet: AOD2610_002 datasheetAOD2610_002 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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AOD2610_002 is a common type of field-effect transistor (FET), specifically a power metal-oxide-semiconductor field-effect transistor (MOSFET). It features high power efficiency and low on-resistance in a small package, and is the preferred type of transistor for power applications.

This particular FET is a single MOSFET, meaning it has a single channel. All MOSFETs contain at least one channel, which is the path between source and drain terminals. It is this channel that controls the current flow through the transistor based on the bias voltage connected to its gate. In the case of single MOSFETs, both the source and drain terminals are connected to the same channel.

Due to its small size, AOD2610_002 is well-suited to a variety of applications. The most common application is in high-power devices such as automotive electronics. Its low on-resistance makes it ideal for switching large loads efficiently, and its small physical size helps to decrease the overall footprint of the device. This type of transistor is also commonly used in power management devices, power supplies, and motor controllers.

Another key advantage of the AOD2610_002 is its high power efficiency. This is due to its low on-resistance, which significantly reduces energy losses when switching large loads. This helps to ensure that energy is being used as efficiently as possible, as energy losses are minimized and overall device efficiency is increased.

The working principle of AOD2610_002 is based on the behavior of electrons in the MOS gate-channel. When a signal is applied to the gate terminal, it attracts or repels electrons from the channel, altering their distribution and allowing the current to flow through the channel. This is the basic principle behind FETs and the current control that they offer.

AOD2610_002 also offers a number of other features and benefits, such as increased operating temperature, high power dissipation and excellent electrical isolation. These features make the AOD2610_002 an excellent choice for a wide range of applications, such as high-power and low-noise devices.

In summary, the AOD2610_002 is a single MOSFET field-effect transistor with a number of advantages. Specifically, it offers low on-resistance, high power efficiency and small size, making it ideal for a range of applications, such as automotive electronics and power management. Additionally, it offers a number of other key features, such as increased operating temperature, high power dissipation and excellent electrical isolation.

The specific data is subject to PDF, and the above content is for reference

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