AOD2N100M

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AOD2N100M (also known as Advanced Power MOSFET) is a single, can-packaged insulated gate bipolar transistor (IGBT) with both depletion- and enhancement-mode characteristics. Its wide variety of benefits and applications make it an excellent choice for many power-management applications. In this article, we will explore its application field and working principle.

Application Field

The AOD2N100M’s primary application field lies in the power management sector where power supply will be supplied to many active loads in a circuit. Devices in this device class offer a variety of beneficial features, due to their combination of depletion- and enhancement-mode characteristics. Such features include resistance to electrical noise, instant on/off operation, high temperature operation, and the ability to switch between different power modes without any latency. This makes the AOD2N100M an ideal choice for many power-management applications, such as motor control, power-line communication, IGBT/MOSFET driver circuits, and more.

The AOD2N100M can also be used in off-grid power applications, such as back-up power supplies. Its superior low-voltage operation, combined with its wide temperature range provide the necessary level of power and reliability for off-grid applications. In addition, its high-temperature capability allows it to withstand heavy shock and vibration, making it an ideal choice for harsh and extreme operating environments.

Working Principle

The working principle of the AOD2N100M device is based on the principle of depletion- and enhancement-mode characteristics. In depletion-mode operation, the gate voltage of a MOSFET is increased beyond the device’s threshold voltage, causing the inversion region to narrow and the channel current to increase. This causes the device to increase its output current; hence, the output voltage is increased. In enhancement-mode operation, the gate voltage is applied in the opposite direction, causing the inversion region to widen and the channel current to decrease. As a result, the output current is decreased and the output voltage is decreased.

The key feature of the AOD2N100M is its ability to operate in both modes. This allows for a wide range of power-management applications, from light loads to heavy loads, as the device can switch from depletion- to enhancement-mode operation and vice versa. The device can also manage latency and voltage droop, as it can effectively lower the output voltage when heavy loads are connected, and can increase the output voltage when light loads are connected. All these features make the AOD2N100M a great choice for many power-management applications.

Conclusion

The AOD2N100M is a single, can-packaged insulated gate bipolar transistor (IGBT) that can be used in many power-management applications. Its ability to switch between depletion- and enhancement-mode makes it an ideal choice for both on- and off-grid applications. Furthermore, its low-voltage operation and high-temperature capability make it suitable for many harsh and extreme operating environments. With its wide variety of features, this device can provide the necessary power and reliability for many power-management applications.

The specific data is subject to PDF, and the above content is for reference