AOD240_001 Allicdata Electronics
Allicdata Part #:

AOD240_001-ND

Manufacturer Part#:

AOD240_001

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 40V 23A TO252
More Detail: N-Channel 40V 23A (Ta), 70A (Tc) 2.7W (Ta), 150W (...
DataSheet: AOD240_001 datasheetAOD240_001 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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AOD240_001 is a single-ended Enhancement Mode MOSFET, which is mainly used in switching circuits. This type of transistor is mostly employed in logic, pulse, and logic or pulse-gated systems involving on-off, up/down or power switching. It is therefore an ideal choice for various off-line, low power applications.

AOD240_001 is constructed on a single substrate so that the channel is sandwiched between the drain and the source terminal. The channel is composed of two different layers, an N-type and a P-type. With the application of a bias voltage to the gate terminal, the transistor can conduct electrons between the drain and the source, thus establishing a flow of current from the drain to the source. The more bias voltage is applied, the more current is allowed to flow through the channel.

The AOD240_001 comes with many features that make it a flexible choice for applications requiring high speed, low power, or high voltage operation. It has a robust gate oxide protection and high voltage rating (20 to 80 V) which makes it suitable for applications in automotive, industrial, and medical applications. Additionally, the low gate leakage current ensures high switching frequency or energy efficiency. It also offers a remarkable off-isolation (RDS(on)) between the gate and drain of 2.6 Ω.

The working principle of AOD240_001 is straightforward. When bias voltage is applied to the gate terminal, the gate-source junction is formed, allowing electrons to flow between the source and the gate. As electron flow is increased, the drain current increases, and the source-drain junction is forward-biased, allowing current to flow from the source to the drain and vice versa. This transistor is also capable of controlling the drain current by varying the gate voltage and turning the transistor ON or OFF. Thus, it is used widely in digital switching, logic and pulse-gated systems where the ON-OFF state of a circuit needs to be changed.

AOD240_001 transistors offer excellent performance, reliability, and switching speed in a single-ended MOSFET package. It is an excellent choice for a wide range of digital and analog/digital applications, such as switching, logic and power switching. Its ability to control the drain current by varying the gate voltage makes it an ideal choice for low voltage applications and its robust gate oxide protection and high voltage rating make it suitable for applications in automotive, industrial, and medical applications. Its high off-isolation ensures energy efficiency and reduced switching loss. This single-ended MOSFET is perfect for use in low power and off-line applications, making it an ideal choice.

The specific data is subject to PDF, and the above content is for reference

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