AOI208

AOI208 is a Silicone on Insulator (SOI) technology field effect transistor (FET) chip. This chip is manufactured by Advanced Power Technology (APT). It is a three-terminal device. It is primarily used for digital signal and power management applications. This FET chip has a low on-state resistance combined with a low gate threshold voltage. It is machined using a proprietary silicon on insulator (SOI) process, which results in a robust dielectric layer that is more resistant to damage when exposed to heavy current flows.

The AOI208 is designed to deliver an impressive level of performance. It is capable of operating at very low voltage (5V or lower) and current (3A or less). This makes it ideal for applications such as battery charging, motor control, and power management. The AOI208 also features a low gate threshold voltage, which ensures a high switching speed and improved power efficiency. The device features a low on-state resistance, excellent noise immunity, and static drain-source resistance.

The AOI208 features a single MOSFET structure. It is composed of two MOSFETs, p+ and n+ regions, and the source, gate, and drain regions. The MOSFETs can be either N or P channel type. The p+ is connected to the source, while the n+ is connected to the drain. The gate region is insulated by a thin dielectric layer. This dielectric layer is created by the SOI process and it serves as a physical barrier between the source, gate, and drain. It is also responsible for controlling the electric field from flowing from one terminal to another.

The working principle of AOI208 is based on the principle of field effect transistor. It operates by creating an electric field within the semiconductor material parasitically formed between the source and drain. Depending on the electric field intensity, electrons will either flow away from or towards the gate. When the gate voltage is high, the electrons flow away from the gate, resulting in a high electric field. This high electric field creates a low resistance path between the source and drain. Thus, the current is allowed to pass through the device.

The AOI208 is capable of handling high switching speeds and a wide operating range. It is an excellent choice for a wide range of digital signal and power management applications. The device features an impressive on-state resistance and gate threshold voltage, making it a great option for applications requiring high power efficiency and low noise immunity. With its impressive performance and robust construction, the AOI208 is sure to be a great addition to any system.

AOI2606	Alpha & ...	--	1000	MOSFET NCH 60V 46A TO251A...
AOI294A	Alpha & ...	0.36 $	1000	MOSFET N-CH 100V 55A TO25...
AOI208	Alpha & ...	0.0 $	1000	MOSFET N-CH 30V 18A TO251...
AOI2610E	Alpha & ...	0.22 $	1000	MOSFET N-CH 60V 46A TO251...
AOI2210	Alpha & ...	0.0 $	1000	MOSFET N-CHN-Channel 200V...
AOI206_002	Alpha & ...	0.0 $	1000	MOSFET N-CH 30V 18A TO251...
AOI2N60A	Alpha & ...	--	1000	MOSFET N-CH 600V 2AN-Chan...
AOI296A	Alpha & ...	--	1000	MOSFET N-CH 100V 70A TO25...
AOI2N60	Alpha & ...	--	1000	MOSFET N-CH 600V 2A TO251...
AOI2610	Alpha & ...	--	1000	MOSFET NCH 60V 46A TO251A...
AOI2614	Alpha & ...	0.0 $	1000	MOSFET NCH 60V 35A TO251A...