AOI2210 Allicdata Electronics
Allicdata Part #:

785-1708-5-ND

Manufacturer Part#:

AOI2210

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH
More Detail: N-Channel 200V 3A (Ta), 18A (Tc) 2.5W (Ta), 100W (...
DataSheet: AOI2210 datasheetAOI2210 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251A
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2065pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 18A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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AOI2210 is a P-Channel MOSFET that is suitable for a wide range of applications. Its single-package encapsulated in a standard 8-lead TO-253 package makes it an ideal choice for designers who are seeking a reliable and cost-effective solution for their designs.

AOI2210 is primarily used in linear, low-side switch mode power supply (SMPS) applications including AC/DC and DC/DC converters. It is also useful in audio applications such as audio amplifiers, instrumentation devices and instrumentation amplifiers. In addition, AOI2210 can be used for high-side switching in motor-control applications.

The AOI2210 has a gate-drain breakdown voltage rating of ±20V and a drain-source breakdown voltage rating of ±15V. It has an on-resistance of less than 0.7Ohms, a low gate-voltage turn-on, fast switching speed, low Leakage currents, and low capacitance. It also has a need of low gate drive current, making it suitable for low current switching applications.

The working principle of AOI2210 is based on its internal structure. It consists of a P-channel MOSFET, which is a type of transistor formed on a silicon substrate. The MOSFET has four terminals: source, gate, drain, and body. The source and drain terminals are responsible for current flow, while the gate terminal controls the current flow. The body terminal is connected to the substrate and is responsible for controlling the voltage between the source and drain. When a voltage is applied to the gate terminal, it changes the electric field between the source and drain, allowing current to flow through the device. This is known as the “on state”. When the voltage is removed, the electric field disappears and the device is no longer able to conduct current. This is known as the “off state”.

AOI2210 is the perfect choice for applications requiring low on-resistance, low gate-drive current, and fast switching speeds. Its versatility and low cost make it an excellent choice for designs requiring reliable switching in harsh environments. With its robust design, AOI2210 is capable of performing in a wide range of applications and is a popular choice for designers seeking a reliable and cost-effective solution for their designs.

The specific data is subject to PDF, and the above content is for reference

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