AOI2N60

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-251-3 Stub Leads, IPak
Supplier Device Package:	TO-251A
Mounting Type:	Through Hole
Operating Temperature:	-50°C ~ 150°C (TJ)
Power Dissipation (Max):	56.8W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	325pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	11nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4.4 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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AOI2N60 Application Field and Working PrincipleAOI2N60 is a vertical double-diffused MOSFET (VDMOS) transistor. It is constructed by diffused a P-type substrate with two N-type regions. It is produced by ROHM selling to a wide range of industries and customers on the commercial markets. This type of MOSFET has a wide range of applications including in the AC/DC power converter, high frequency switching operation, charger circuits, auto power window function, and voltage regulator areas.It seems that AOI2N60 can be used in several electronic applications such as AC/DC power conversion, high frequency switching, charger circuits, auto power window function, voltage regulator. AOI2N60 provides low on-state resistance and excellent switching characteristics, so it is mainly used for general purpose low/medium power switching applications, as well as motor controls and Air conditioner.The AOI2N60 operates with a P-Channel and is designed for DC-DC conversion in the industrial and automation equipment and other electronic devices. It uses a low on-state resistance that can enhance the efficiency of power management systems.The AOI2N60 has a Vth (threshold voltage) of -3 to -8 V and a maximum drain-source voltage of 600 V. It can handle currents up to 340 mA and power dissipation up to 700W. It also has high switching speeds with a threshold voltage of 5V, allowing the device to be used in high frequency switching operations. It is also suitable for Low Gate Charge (Qg) applications.The working principle behind AOI2N60 is that it uses a channel type MOSFET which is made up of a semiconductor body with two symmetrical regions which can act as an insulator or a conductor with the help of a gate voltage. The gate of the MOSFET controls the width of the channel between the source and the drain, which in turn determines the source-drain current that can flow through it. The source-drain current is determined by the voltage applied at the Gate. When voltage is applied, the MOSFET is said to be “ON”, meaning that it will pass current and turn on a circuit. When the voltage is removed, the MOSFET is said to be “OFF” and it will no longer pass current, thereby turning off the circuit.The AOI2N60 also has excellent thermal conducting capabilities and has a temperature range of -55°C to +150°C. This allows the device to reliably function in a variety of environments, such as in automotive and communication systems.Overall, AOI2N60 can be used in many electronic applications such as AC/DC power conversion, high frequency switching, charger circuits, auto power window function, voltage regulator and motor controls. It is known for its low on-state resistance and high-switching speeds and its wide temperature range, making it an ideal device for the applications mentioned above. It has the potential to increase efficiency significantly in the application field in which it is used.

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