AOL1206 Allicdata Electronics
Allicdata Part #:

AOL1206-ND

Manufacturer Part#:

AOL1206

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 16A 8ULTRASO
More Detail: N-Channel 30V 16A (Ta), 54A (Tc) 2.7W (Ta), 62W (T...
DataSheet: AOL1206 datasheetAOL1206 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: 3-PowerSMD, Flat Leads
Supplier Device Package: UltraSO-8™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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AOL1206 is one of the more specialized field effect transistors that have been developed by Analog Devices, Inc. As its name suggests, this particular MOSFET is designed for applications with higher demands for lower power consumption and higher switching speeds. This article will provide a brief overview of the AOL1206, its application field and working principle.The AOL1206 is a standard-gate, n-channel MOSFET, meaning it is a field effect transistor with a gate contact in the form of an n type semiconductor as well as an n-channel junction formed at the gate terminal. The MOSFET is capable of providing fast switching speeds and low on-state resistance making it suitable for power switching and motor control applications.In terms of its application field, the AOL1206 is well suited for applications where significantly lower power consumption is important or fast switching times are necessary. These include automotive, switching power supplies and electronic circuits with audio and video signals. The transistor is also suitable for use in low-reactive circuits with switching speeds up to 1MHz.In terms of the working principle of the AOL1206, the transistor is based on a regime where a channel of n-type material located between the source and the drain of the MOSFET is formed. When the gate voltage of the device is sufficiently high - usually in excess of 8V - then a channel is created and the current flow between the drain and the source is allowed. The current through the transistor can be modulated by controlling the voltage of the gate.The AOL1206 is designed to offer a decent amount of protection protection against electrostatic discharge by implementing a special gate guard ring. This guard ring ensures that there is enough gate sensitivity to ensure switch on and the transistor is shut off in the event of excessive gate voltage.In addition, the AOL1206 includes an internal zener diode to protect the drain from voltage exceeding the maximum drain voltage ratings. The zener diode begins conducting at a voltage as low as 8V above the drain-source voltage, and helps protects against overvoltage conditions at the drain terminal of the device.In conclusion, the AOL1206 is an ideal MOSFET for applications where fast switching speeds and low power consumption are important. It offers a variety of features such as a gate guard ring and a zener diode for increased protection and features a small 4mm by 4mm package for easy mounting.

The specific data is subject to PDF, and the above content is for reference

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