AON3810

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AON3810 is an array of high-bandwidth, low-resistance ITFET transistors offering excellent power efficiency and fast switching times. It combines the low on-resistance and high current capabilities of Indium Gallium Arsenide (InGaAs) with the unmatched performance of Nanoelectrics array technologies. The AON3810 is designed for applications requiring high-efficiency, high-current performance with low on-resistance and fast switching times.

The AON3810 is ideal for use in a wide range of applications including power management, motor control applications, and high-voltage, high-current converters. It offers superior efficiency, improved area management, and higher reliability than other FETs due to its low on-resistance and fast switching capabilities.

The AON3810 is also suitable for use in applications such as point-of-load regulated dc-dc converters, buck and boost converters, LED drivers, and motor driver applications. It can be used in a wide variety of situations, for instance as a control element in an H-bridge motor driver or as a half-bridge driver in a full bridge application that requires more power than is provided by a single half-bridge.

The AON3810 is a unipolar FET array composed of four I-MOSFETs, made using Nanoelectric\'s high-performance I-MOSFET platform. I-MOSFETs provide superior performance compared to conventional FETs due to their high-rate of charge injection and fast switching capabilities. This enables the AON3810 to provide extremely low on-resistance and fast switching times.

The AON3810 comes with an integrated gate driver circuit, which is programmed with onboard firmware. It facilitates a high-switching frequency in applications where fast performance is required. The gate driver provides PWM modulation for switching, with an adjustable frequency, for excellent control. The AON3810 also includes precision internal sensing with an accuracy of 1%, and adjustable synchronous rectification for enhanced efficiency.

In terms of power dissipation, the AON3810 offers higher power efficiency compared to conventional FETs. The on-resistance of the device is very low, which reduces power losses and helps to maximize the power efficiency. Additionally, the device features an operation temperature range of -40°C to +150°C, with a specific I-MOSFET given temperature coefficient of +288mΩ/℃.

Overall, the AON3810 offers excellent performance, reliability and efficiencies at high frequencies and high temperatures. It is an ideal device for a wide range of applications requiring high-efficiency, high-current performance with low on-resistance and fast switching times. Its superior features such as on-resistance, fast switching, integrated gate driver, and precise temperature control make it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference