AON3814

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AON3814, a high-voltage CMOS array, is a relatively new development in the power field. It allows high-power applications to be realized with the high switching speed of CMOS technology. This array is a 4-channel N-Channel Enhancement Mode MOSFET array with individually adjustable on-resistance, which can replace a variety of N-Channel external FETs. With a minimum on-state resistance of 12 mΩ, this array provides excellent end-to-end current control.

In order for AON3814 to perform as expected, a low-resistance connection between the source electrode and the drain electrode is necessary to maintain a low on-state resistance. This connection is called a drain-source terminal short. This short can be adjusted to limit the current through the FET to the desired level. By doing this, AON3814 can accurately control current flow.

AON3814\'s operating voltage is 35 V and it has an operating gate-to-source voltage range of -20 V to 0 V. Its gate-source capacitance is 2 pF at 2 V gate-to-source voltage and its gate-drain capacitance is 1 pF at 2 V gate-to-source voltage. Its RMS noise voltage is typically less than 1 mV and its thermal resistance is typically 0.1 °C/W.

The design of AON3814 allows it to be used in applications such as lighting, robotics, industrial control, motor control, and power supplies. For example, AON3814 can be used in motor control applications to accurately control the rotational speed by adjusting the current. This can also be used to accurately control the power conversion efficiency of power supplies and similarly regulate the current in other applications.

As for its working principle, AON3814 is an enhancement-mode MOSFET array. When the gate is left floating, the FET is turned off. This is because the gate-source voltage is practically zero, meaning that no electric field exists between the gate and the source, and thus no current can flow through the FET and the MOSFET is considered to be in the off-state. When the gate voltage is increased, the electric field between the gate and the source increases and a current begins to flow.

The operation of AON3814 is based on the fact that the gate-voltage controls the conductivity of the FET. The relationship between the gate and source voltage can be described by the body effect, which describes how the source voltage varies for different gate-voltages. This relationship is discrete, meaning that for each gate-voltage step, there is a corresponding increase in the source voltage.

In summary, AON3814 is a high-voltage CMOS array that can be used in a variety of power applications. It has a low on-state resistance and can accurately control the current flow. Its operation is based on the body effect, which describes how the source voltage varies for different gate-voltage steps.

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