AON3816_101

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The AON3816_101 is an array of 8 p-channel metal oxide semiconductor field-effect transistors (MOSFETs). It is an innovative solution to help reduce the size of systems while also still providing the required levels of power efficiency. This product makes use of advanced low-voltage technology to reduce power consumption, while still providing the performance of standard logic. The AON3816_101 also offers protection features that help prevent system malfunctions.

The AON3816_101 is commonly used in many electronic applications, particularly those because of its low power consumption and advanced protection features.

Applications include:

• Automotive
• Consumer electronics
• Power management
• Industrial systems
• Medical devices

The AON3816_101 is also used to control power cycling in certain applications as well as providing general logic switching. The array\'s small footprint also makes it suitable for use in space-constrained applications.

The working principle of the AON3816_101 revolves around a structure of 8 MOSFETs connected in parallel across the power supply between its power and ground terminals. Each MOSFET may be individually controlled by applying a particular voltage level to its gate terminal from the source. This causes the drain terminal to switch its connection to either the source or the ground, depending on the voltage level of the gate. By controlling individual MOSFETs, the current that is allowed to flow through the array is modulated.

Additionally, the array also includes many features to increase its protection levels. These features include:

• Voltage limiting
• Reverse-voltage protection
• Mutual-protection diodes between the drains and Source pins
• Under-voltage lockout (UVLO) capability
• Integrated ESD protection

In conclusion, the AON3816_101 is an array of 8 p-channel MOSFETs which is suitable for use in applications requiring small size, low power consumption and enhanced protection features. It operates by modulating the current that is allowed to flow through the array according to the voltage that is applied to its gate terminals, and also includes various integrated protection features.

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