AON3419

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	8-DFN (2.9x2.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1040pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	19 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The AON3419 is a field effect transistor (FET) from Alpha and Omega Semiconductor (AOS). It is a single N-channel MOSFET. The AON3419 is an ideal choice for applications that require low input capacitance, low on-resistance, and low resistive parasitics. The AON 3419 is designed to provide several distinct benefits in a wide array of applications, and it can be used in a variety of different applications, including power switching and audio amp output.The AON 3419 is designed to provide low input capacitance and low on-resistance, making it ideal for high frequency applications. This FET also features excellent reliability and power cycling capabilities. In addition, it offers low-voltage operation, making it suitable for use in lower voltage systems. This MOSFET also has an input capacitance of just 20µF and on-resistance of less than 50 mΩ.The AON3419 is designed for a wide operating temperature range, from -40°C to 125°C. This device operates at a maximum operating voltage (VDS) of 20V, and a maximum drain to source current (ID) of 1.5A. It also features low gate charge and low gate-drain capacitance. In addition, it offers excellent thermal performance, which makes it suitable for high-reliability, long-term applications.The AON 3419 works on the principle of MOSFET operation. A MOSFET is an insulated gate bipolar transistor (IGBT), which consists of two main components: an N-type source, and a P-type drain. A voltage applied across the source and drain terminals causes charge carriers, or electrons, to move from the source ion area to the drain side due to the \'field effect\'. This establishes a channel between the source and the drain, and the current through the channel is dependent on the drain-source voltage and the gate-source voltage.The AON3419 can be used in a variety of different applications, including high-frequency amplifiers, power management, and power switching circuits. It is also ideal for audio amp output and high impedance switching applications. The device is designed to provide excellent thermal and electrical characteristics, making it suitable for high-performance and reliable circuits.The AON3419 is an ideal choice for applications that require a low input capacitance, low on-resistance, and low resistive parasitics. Its excellent thermal and electrical characteristics make it an ideal choice for applications requiring high frequency performance and high reliability. The AON3419 is an ideal choice for applications that require low input capacitance and low on-resistance, making it ideal for high frequency applications. The device has an input capacitance of just 20µF and on-resistance of less than 50 mΩ.

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