Allicdata Part #: | AON3402-ND |
Manufacturer Part#: |
AON3402 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 20V 12.6A 8DFN |
More Detail: | N-Channel 20V 12.6A (Ta) 3.1W (Ta) Surface Mount 8... |
DataSheet: | AON3402 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 8-DFN (2.9x2.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1810pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 17.9nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 12A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 12.6A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AON3402 is a versatile yet cost-effective semiconductor device that is suitable for use in a variety of application fields. This device is a single-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that has been designed with 30V of gate-source breakdown voltage, 40V of drain-source breakdown voltage, and a maximum drain current of 5A. Due to its wide range of properties, the AON3402 is suitable for use in a range of applications, including motor drivers, inverter controllers, H-bridge drivers, and pulse-width modulation (PWM) controllers.
The AON3402 is constructed using the latest advanced process technology, which offers an improved combination of price and performance. The device features a single MOSFET chip, which has an internal gate terminal and two external source terminals. The AON3402 is also able to provide a low on resistance over a wide range of gate-source voltages, meaning that it can switch off with more efficiency than other similar devices. Additionally, the device includes an external gate drive circuit for both the gate-source and drain-source terminals, providing excellent performance for switching applications.
The working principle of the AON3402 is quite simple and can be understood with the help of its internal structure. The device contains two main components; a metal-oxide-semiconductor (MOS) and a gate. The MOS is a highly conducting channel formed between the source and the drain terminals, which is controlled by the voltage applied to the gate. When a positive voltage is applied to the source terminal, it attracts electrons from the drain and creates a flow of charge that passes through the MOS channel and is then directed towards the drain terminal. Conversely, when a negative voltage is applied to the gate, electrons are repulsed from the source towards the gate, causing the MOS channel to be blocked and the flow of charge from the source to the drain to be inhibited.
The AON3402 is suitable for a variety of applications and can be used for power switching, level shifting, and other power control functions. Its wide range of properties makes it suitable for use in low-voltage and high-current applications, such as motor driver circuits and inverter controllers. Additionally, the device can be used in pulse-width modulation (PWM) controllers and H-bridge drivers, providing excellent performance and reliability in these applications.
In summary, the AON3402 is a versatile, cost-effective, and reliable semiconductor device which is suitable for use in a wide range of application fields. Its single MOSFET chip, wide range of voltage and current capabilities, and its protection against gate-source and drain-source breakdowns make it an ideal choice for a range of applications, including motor drivers, inverters, PWM controllers, and H-bridge circuits. Its working principle is based on the attractive and repulsive forces of electrons, which when directed and managed correctly, enable the device to switch on and off with extremely high efficiency.
The specific data is subject to PDF, and the above content is for reference
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