AOT8N60

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AOT8N60 is a advanced insulated-gate-power bipolar-transistor (IGBT) which is the combination of vertical power MOSFET and bipolar transistor. It has many advantages such as high input impedance, small gate capacitance, low driving power, faster switching ability, and excellent immunity performance. Therefore, it has wide application fields in the often-used electronic equipments.

The working principle of AOT8N60 is based on the basic of power MOSFET. It consists of two components. One is vertical MOSFET which can control the power flow between the collector and the emitter. The other one is bipolar transistor which has two switching nodes, the base and the collector, and the two nodes are usually connected in parallel. When the voltage between the base and the collector is applied, the current will flow from the base to the collector and then pass through the vertical MOSFET.

When the external power supply applied to the circuit, the MOSFET will start to works, and the voltage between the base and the collector will decrease. This reduces the forward voltage of the collector to the base, causing the base current to flow, and thus turning on the transistor. The current then passes through the collector, the drain and the source of the insulated-gate-power bipolar-transistor (IGBT) to the power supply. This forms a complete conduction path for the power current to flow from the power supply to the load.

In the meantime, the current flow between the base and the collector also makes the MOSFET gate voltage rise, which will further reduce the bias voltage at the base and thus further switch on the transistor. Once the gate voltage reaches its maximum limit, the gate current will no longer flow and the conduction path will be cut off.

Besides, when the conduction path is cut off, the potential difference between the drain and the source of the IGB will also decrease. This will reduce the current flowing through the transistor, and thus reduce the collector voltage to the base, making it no longer possible for the transistor to switch on. Hence, the conduction path will remain cut off, thus preventing the conduction of power.

Overall, AOT8N60 can be normally used in the electronic equipments where high fast switching ability and excellent immunity performance are required. As an application example in the power electronic field, this device can be for the motor control, lighting control, plasma cutting, welding and other high power devices.

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