AOT8N65_001

Introduction

AOT8N65_001 field effect transistor (FET), commonly referred to as the MOSFET (metal oxide semiconductor field effect transistor), is a single transistor with a small footprint and low power consumption. It is a popular choice for applications in the high frequency range and for miniature circuit applications due to its high efficiency. The basic external structure of the MOSFET comprises of the Gate, Source, Drain and Substrate. The AOT8N65_001 FET has a maximum drain source voltage of 650 V and drain current of 24 A.

Application field

The AOT8N65_001 is mainly used in high disconnecting capacity applications, such as automotive power systems, industrial heating, commercial cooking and high-current power supplies. Due to its maximum drain source voltage of 650V, it can be applied in applications such as switch mode power supplies, high frequency inverter circuits, DC-DC converters, solid-state relays and high power switching. It can also be used in low voltage AC-DC switch mode power supplies as well as low noise amplifier systems.

Working principle

The AOT8N65_001 FET works by controlling the amount of current flowing through the channel between the source and drain by applying a voltage to the gate. When a voltage is applied to the gate, it attracts electrons from the channel, thus reducing the resistance of the channel and allowing current flow from source to drain. The ratio of drain-source current (Ids) divided by gate-source voltage (Vgs) is called the Transconductance of the FET (Gm).

The AOT8N65_001 FET is a unipolar device, meaning that it has two types of charge carriers, holes and electrons. When a voltage is applied to the gate, it attracts the electrons in the channel, thus reducing the channel resistance and allowing current flow from source to drain. The drain-source resistance (Rdson) is dependant on the gate-source voltage (Vgs). The higher the voltage, the higher the Rdson and the less current that can flow through the channel. In addition, the FET also has a higher breakdown voltage (BVdss) than bipolar transistors, making it ideal for high voltage applications.

Conclusion

The AOT8N65_001 FET is a versatile and reliable single transistor with a small footprint and low power consumption, making it a popular choice for many high voltage applications. It offers a high Source-Drain voltage and can handle high current loads with ease. In addition, it also has a high breakdown voltage and a high transconductance. The AOT8N65_001 can easily be applied in applications such as switch mode power supplies, high frequency inverter circuits, DC-DC converters, solid-state relays, high power switching and low noise amplifier systems.