
Allicdata Part #: | AOT8N65-ND |
Manufacturer Part#: |
AOT8N65 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 650V 8A TO220 |
More Detail: | N-Channel 650V 8A (Tc) 208W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 208W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.15 Ohm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AOT8N65 is a 150 Volt, 55 mΩ Power MOSFET manufactured by Advanced Power Electronics Corporation (APE). The AOT8N65 has been designed as a high power, low RDS(on) device that is capable of supplying high current in both linear and switch mode applications. The device is packaged in an 8-pin PQFN package with a drain source voltage of 65 V and a maximum continuous drain source current of 28 A.
The AOT8N65 is a vertical mode N-Channel MOSFET that utilizes advanced high-voltage, process technology to create an optimized balance between RDS(on) and gate threshold voltage. This device is well suited for use in switch mode and motor drive applications. It is capable of operating in a power range of up to 150V and can switch currents up to 28A.
The AOT8N65 is designed for use in a variety of applications, including but not limited to, switch mode power supplies, AC/DC converters, motor drive circuits, and battery charging applications. The device is optimized for use in high voltage and high current applications, making it an ideal choice for applications that require high power efficiency.
The working principle of the AOT8N65 is based on the utilization of a vertical mode N-Channel MOSFET. This type of device is made up of a source, a gate, and a drain. The source and drain are the two electrodes through which current flows, while the gate is the control electrode that is used to control the current flow. When a voltage is applied to the gate, it creates an electrostatic field that in turn modulates the width of a conducting channel between the source and drain. This in turn allows or denies current flow depending on the applied voltage, resulting in effective current control.
The AOT8N65 is a powerful and versatile MOSFET that can be used in a variety of applications. With a 150 V drain source voltage and 28 A continuous drain source current, the device is well suited for high power and high current applications. The device’s advanced technology enables it to operate efficiently and effectively in any application, making it an ideal choice for designers who need an effective and reliable high voltage power switch.
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