Allicdata Part #: | APT20SCD120B-ND |
Manufacturer Part#: |
APT20SCD120B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE SCHOTTKY 1.2KV 68A |
More Detail: | Diode Silicon Carbide Schottky 1200V 68A (DC) |
DataSheet: | APT20SCD120B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | -- |
Part Status: | Obsolete |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io): | 68A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.8V @ 20A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0ns |
Current - Reverse Leakage @ Vr: | 400µA @ 1200V |
Capacitance @ Vr, F: | 1135pF @ 0V, 1MHz |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes - Rectifiers - Single
APT20SCD120B is a single-phase, 1200V Silicon Carbide Schottky diode product that is part of a series of next-generation, low-loss devices used in a variety of power applications. This series of silicon carbide Schottky rectifier diodes are advanced devices engineered to support higher efficiency and higher temperature operation in a wide variety of hard-switching and high-frequency systems.
Applications
APT20SCD120B have the capability to manage a wide range of power frequencies, such as those found in solar and automotive applications. Due to their low reverse leakage and low forward voltage drop, these diodes are especially suitable for applications that require soft-switching and maximum efficiency. Examples of applications for the APT20SCD120B include AC-DC and DC-DC converters, DC-AC converters, as well as motor drives and modular gate drives.
Working Principle
The APT20SCD120B is a dead-time optimized, temperature-compensated diode which provides very low forward voltage drop and low reverse leakage currents. By combining a Schottky diode with a Silicon Carbide substrate, these products are able to achieve a high forward voltage operation that is robust and reliable. The optimized diode structure helps to reduce forward voltage drop and reverse leakage current, resulting in higher efficiency and higher temperature operation. The Silicon Carbide substrate adds an additional protection from junction temperature rise, allowing these diodes to operate at higher junction temperatures. This temperature-compensated technolog,y also helps to minimize the effects from thermal stress, making the APT20SCD120B devices more reliable.
The APT20SCD120B is specifically designed for hard-switching and high-frequency applications. This diode has excellent switching characteristics and is capable of operating at high frequencies, making them suitable for use in automotive, solar, and lighting applications. Moreover, the optimized design greatly reduces switching losses, and it is capable of operating at temperatures of up to 175 °C. This makes it ideal for use in applications that require high reliability and long life.
Conclusion
The APT20SCD120B is a next-generation power device engineered to support higher efficiency and higher temperature operation in a variety of hard-switching and high-frequency systems. It is designed for use in applications that require soft-switching, maximum efficiency, and high reliability. This product is capable of managing a wide range of power frequencies, and it is able to operate at high switching frequencies. Moreover, its optimized diode structure allows for a low forward voltage drop and low reverse leakage current, resulting in increased efficiency and higher temperature operation.
The specific data is subject to PDF, and the above content is for reference
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