Allicdata Part #: | APT30GN60BG-ND |
Manufacturer Part#: |
APT30GN60BG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 63A 203W TO247 |
More Detail: | IGBT Trench Field Stop 600V 63A 203W Through Hole ... |
DataSheet: | APT30GN60BG Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 203W |
Supplier Device Package: | TO-247 [B] |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Test Condition: | 400V, 30A, 4.3 Ohm, 15V |
Td (on/off) @ 25°C: | 12ns/155ns |
Gate Charge: | 165nC |
Input Type: | Standard |
Switching Energy: | 525µJ (on), 700µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 90A |
Current - Collector (Ic) (Max): | 63A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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APT30GN60BG Application Field and Working Principle
APT30GN60BG is an Insulated Gate Bipolar Transistor (IGBT) of the single type, produced by Infineon Technologies AG. It is an efficient, low-cost high-current module (30 A, 600 V), mainly used in STS (Static Switch Boards) for high power switching and in the traction industry for locomotive applications. The chip is constructed of a highly efficient IGBT, Trench Gate Field Stop (TGFS) technology, a reliable freewheeling diode, and a fast 250ns (nanoseconds) recover diode. The APT30GN60BG features both a robust and efficient design, a low on-state voltage, and fast turn-on and turn-off times. The device is equipped with a floating emitter feature, which can be specifically useful in applications that may require line side feeding.
Working Principle
An IGBT is a device that combines field-effect transistors and bipolar junction transistors. The field effect transistors are used as the input (gate driver) device and the bipolar junction transistors are used as the output (collector-emitter) device. When the gate driver voltage is applied, the field-effect transistors create an electric field which then modulates the conductivity of the base region of the bipolar junction transistors.
The APT30GN60BG IGBT has a high efficiency mode of operation which is characterized by a very low on-state voltage. The low on-state voltage ensures a high power-switching efficiency and reduced switching losses compared to traditional IGBTs. Additionally, the APT30GN60BG has a high current-switching capability, with a maximum rating of 30A.
The APT30GN60BG also uses a fast-recovery diode with a reverse recovery time of only 250nS. This diode prevents reverse currents from flowing and maintains a low reverse-current leakage level, helping reduce switching losses. Additionally, the use of the fast-recovery diode increases the gate capacitance, resulting in a higher gate driving voltage.
The freewheeling diode, which is also included in the APT30GN60BG module, can be used in applications that may require line side feeding and a floating emitter. The freewheeling diode provides a path for current when the current flow is interrupted, allowing coils and motors to coast to a stop. The freewheeling diode also helps reduce switching losses and improve the overall efficiency of the device.
Conclusion
The APT30GN60BG IGBT module is a highly efficient and low-cost high-current module. It is primarily used in STS and traction applications and is characterized by a very low on-state voltage, fast turn-on and turn-off times, and a high current-switching capability. Additionally, the device is equipped with a fast-recovery diode and a freewheeling diode, which allows for a cost-effective and robust design.
The specific data is subject to PDF, and the above content is for reference
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