APT30GN60BG Allicdata Electronics
Allicdata Part #:

APT30GN60BG-ND

Manufacturer Part#:

APT30GN60BG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 600V 63A 203W TO247
More Detail: IGBT Trench Field Stop 600V 63A 203W Through Hole ...
DataSheet: APT30GN60BG datasheetAPT30GN60BG Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 203W
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 400V, 30A, 4.3 Ohm, 15V
Td (on/off) @ 25°C: 12ns/155ns
Gate Charge: 165nC
Input Type: Standard
Switching Energy: 525µJ (on), 700µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Current - Collector Pulsed (Icm): 90A
Current - Collector (Ic) (Max): 63A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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APT30GN60BG Application Field and Working Principle

APT30GN60BG is an Insulated Gate Bipolar Transistor (IGBT) of the single type, produced by Infineon Technologies AG. It is an efficient, low-cost high-current module (30 A, 600 V), mainly used in STS (Static Switch Boards) for high power switching and in the traction industry for locomotive applications. The chip is constructed of a highly efficient IGBT, Trench Gate Field Stop (TGFS) technology, a reliable freewheeling diode, and a fast 250ns (nanoseconds) recover diode. The APT30GN60BG features both a robust and efficient design, a low on-state voltage, and fast turn-on and turn-off times. The device is equipped with a floating emitter feature, which can be specifically useful in applications that may require line side feeding.

Working Principle

An IGBT is a device that combines field-effect transistors and bipolar junction transistors. The field effect transistors are used as the input (gate driver) device and the bipolar junction transistors are used as the output (collector-emitter) device. When the gate driver voltage is applied, the field-effect transistors create an electric field which then modulates the conductivity of the base region of the bipolar junction transistors.

The APT30GN60BG IGBT has a high efficiency mode of operation which is characterized by a very low on-state voltage. The low on-state voltage ensures a high power-switching efficiency and reduced switching losses compared to traditional IGBTs. Additionally, the APT30GN60BG has a high current-switching capability, with a maximum rating of 30A.

The APT30GN60BG also uses a fast-recovery diode with a reverse recovery time of only 250nS. This diode prevents reverse currents from flowing and maintains a low reverse-current leakage level, helping reduce switching losses. Additionally, the use of the fast-recovery diode increases the gate capacitance, resulting in a higher gate driving voltage.

The freewheeling diode, which is also included in the APT30GN60BG module, can be used in applications that may require line side feeding and a floating emitter. The freewheeling diode provides a path for current when the current flow is interrupted, allowing coils and motors to coast to a stop. The freewheeling diode also helps reduce switching losses and improve the overall efficiency of the device.

Conclusion

The APT30GN60BG IGBT module is a highly efficient and low-cost high-current module. It is primarily used in STS and traction applications and is characterized by a very low on-state voltage, fast turn-on and turn-off times, and a high current-switching capability. Additionally, the device is equipped with a fast-recovery diode and a freewheeling diode, which allows for a cost-effective and robust design.

The specific data is subject to PDF, and the above content is for reference

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