APT30GS60BRDQ2G Discrete Semiconductor Products

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APT30GS60BRDQ2G is a single IGBT offering an improved VCE(sat) of 800V, 36A and low switching losses in a variety of applications. It utilizes the latest generation IGBT technology and is designed to operate with low gate drive power and low temperature rise, resulting in maximum power density and efficiency. Furthermore, its low leakage current and low profile design makes it ideal for use in battery-powered applications.

The single IGBT is a three-terminal semiconductor device, consisting of a p-type collector, an n-type emitter and a gate that is used to control the flow of current through the device. The IGBT is basically the same as a bipolar Junction transistor (BJT) but with the addition of a gate between the base and the collector. This gate allows the IGBT to be used as a switch that can be turned on/off with a relatively small current, as compared to a standard BJT. When the gate is turned on, current can flow through the device and is limited only by the on-state resistance of the IGBT. When the gate is turned off, the current flow is blocked and the IGBT acts as an insulated electrical switch.

Single IGBTs are used in many industrial and consumer applications such as: DC-AC converters in solar inverters and power supplies, DC-DC converters, motor drives and control, converters and rectifiers in battery-powered applications, and in power devices such as switches and relays. In each application, the single IGBT’s switching characteristics, including low gate voltages, low on-state resistances, high breakdown voltages and high switching speeds, make it a valuable component for efficient and reliable operation.

APT30GS60BRDQ2G is a single IGBT with an improved VCE(sat) of 800V and 36A. Due to its low leakage current, the device is well-suited for battery-powered applications. Additionally, its low profile design provides improved power density and greater efficiency. With its high switching speed, it is ideally suited for DC-AC, DC-DC, motor drive and control, and other power switching applications.

The working principle of an IGBT is quite simple. When the gate of the device is turned on, the current flow is limited only by the on-state resistance of the device. The current flow determines the voltage across the device and, as the voltage increases, it blocks the flow of current. This is called the “saturation” voltage and is used to control the on/off switching of the device. As the gate is turned off, the IGBT acts as an insulated electrical switch and current cannot flow through the device.

In summary, the APT30GS60BRDQ2G is a single IGBT device with 800V, 36A of improved VCE(sat), low gate drive power, and low on-state resistance. It is ideal for DC-AC, DC-DC, motor drive and control, and power switching applications due to its high switching speed and low profile design. Additionally, its low leakage current makes it ideal for use in battery-powered applications.

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