APT31M100B2 Allicdata Electronics
Allicdata Part #:

APT31M100B2-ND

Manufacturer Part#:

APT31M100B2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 1000V 32A T-MAX
More Detail: N-Channel 1000V 32A (Tc) 1040W (Tc) Through Hole T...
DataSheet: APT31M100B2 datasheetAPT31M100B2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1040W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Series: POWER MOS 8™
Rds On (Max) @ Id, Vgs: 380 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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APT31M100B2 is a type of single field-effect transistor (FET), also known as a metal oxide semiconductor FET (MOSFET), and it is used frequently in modern electronics. It is a low-cost, high-performance device that helps manage and reduce power consumption in a variety of consumer and industrial applications. Its unique feature is a low on-resistance, which helps make the APT31M100B2 an ideal choice for controlling current flow.

The APT31M100B2 is comprised primarily of just two components: the drain and the source. The drain is the terminal from which current exits, while the source serves as the entrance point for current to enter the FET. Like other FETs, the APT31M100B2 is controlled by a gate voltage applied between the drain and the source. This gate voltage controls the amount of current that can pass through the FET, resulting in a reduction in power consumption.

The main application field of the APT31M100B2 is power management. For example, it can be used in portable electronics, such as smartphones and laptops, to help reduce the total power consumption of these devices. It can also be used in industrial applications to control current flow in motors, pumps, and other machinery. Another potential application of the APT31M100B2 is in the use of electricity and solar energy, where the FET can be used to manage the flow of current.

In order to understand how the APT31M100B2 works, it is important to understand the physics behind its operation. The APT31M100B2 is a type of voltage-controlled device, meaning that it is activated or deactivated by applying a voltage to the gate terminal. When the gate voltage is at a low level, the APT31M100B2 is in its off state, which prevents current from flowing between the drain and the source. If a voltage is applied to the gate, the APT31M100B2 is turned on, and current can flow between the drain and the source.

The physics behind the operation of the APT31M100B2 is more complicated than this, and it involves the manipulation of the electric field between the drain and the source in order to control current flow. The APT31M100B2 uses a process called “gate polarization” to shape the electric field so that it is easy to control. The gate terminal is then used to control the polarization of the electric field, which in turn controls the amount of current that can pass through the FET.

The APT31M100B2 is a highly reliable, low-cost single FET that is used in a variety of consumer and industrial applications. Its unique feature is its low on-resistance, which makes it an ideal choice for managing and reducing power consumption. It works by controlling the flow of current between the drain and the source using a process called gate polarization. By understanding the physics behind its operation, it is possible to take advantage of this device in order to improve power efficiency in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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