APT38N60BC6 Allicdata Electronics
Allicdata Part #:

APT38N60BC6-ND

Manufacturer Part#:

APT38N60BC6

Price: $ 6.24
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 600V 38A TO-247
More Detail: N-Channel 600V 38A (Tc) 278W (Tc) Through Hole TO-...
DataSheet: APT38N60BC6 datasheetAPT38N60BC6 Datasheet/PDF
Quantity: 74
1 +: $ 5.67000
30 +: $ 4.65087
120 +: $ 4.19711
510 +: $ 3.51649
1020 +: $ 3.06275
Stock 74Can Ship Immediately
$ 6.24
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The APT38N60BC6 is a high voltage MOSFET which uses an N-Channel depletion mode technology to achieve high performance levels that exist in a single device. It is designed for use in power conditioning, conversion and transmission devices, in addition to high voltage switching applications such as those in ac-dc converters, DC-DC converters, and other switching power supplies. It is capable of operating with input voltages of up to their stated maximum of 600V.

Application

The APT38N60BC6 provides exceptional power dissipation gain and on-state current conduction. This makes it ideal for many types of applications, including:

  • DC-DC converters
  • AC-DC converters
  • Switching Power Supplies
  • Power Conditioners and Converters
  • High Voltage Switching Applications

In addition, the APT38N60BC6 is especially suitable for high voltage analog and digital circuit applications, due to its low input capacitance, low output capacitance, and high immunity to latch-up effects.

Working Principle

The APT38N60BC6 utilizes N-channel depletion mode technology to achieve its performance. This device has a fabricated JFET-on-MOSFET structure that enables optimal performance, particularly with respect to high voltage switching. This structure consists of a JFET source, which serves as the gate of the MOSFET, and a drain that serves as the drain of the MOSFET.

When the gate-to-source voltage is small and negative, the JFET remains in the off state. However, when the gate-to-source voltage is changed to become positive, the JFET turns on, and the MOSFET channel is created. The channel is then connected to the drain of the MOSFET, and it conducts current and dissipates power.

The JFET-on-MOSFET structure of the APT38N60BC6 has several advantages over standard MOSFETs. For example, the structure significantly reduces the amount of voltage required to turn the device on. This makes the device more energy efficient. Additionally, the structure also increases the device’s immunity to latch-up effects, which improves its ability to handle high voltage applications.

The APT38N60BC6 is capable of providing exceptional power dissipation and current conduction, even in highly demanding applications. This makes the device suitable for a wide variety of power conditioning, conversion, and transmission needs, as well as high voltage switching needs.

The specific data is subject to PDF, and the above content is for reference

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