APT30GT60BRDQ2G Discrete Semiconductor Products |
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Allicdata Part #: | APT30GT60BRDQ2G-ND |
Manufacturer Part#: |
APT30GT60BRDQ2G |
Price: | $ 4.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 64A 250W TO247 |
More Detail: | IGBT NPT 600V 64A 250W Through Hole TO-247 [B] |
DataSheet: | APT30GT60BRDQ2G Datasheet/PDF |
Quantity: | 149 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 4.21470 |
10 +: | $ 3.79512 |
25 +: | $ 3.45794 |
100 +: | $ 3.12064 |
250 +: | $ 2.86761 |
500 +: | $ 2.61458 |
1000 +: | $ 2.27722 |
Series: | Thunderbolt IGBT® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 64A |
Current - Collector Pulsed (Icm): | 110A |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 30A |
Power - Max: | 250W |
Switching Energy: | 80µJ (on), 605µJ (off) |
Input Type: | Standard |
Gate Charge: | 7.5nC |
Td (on/off) @ 25°C: | 12ns/225ns |
Test Condition: | 400V, 30A, 10 Ohm, 15V |
Reverse Recovery Time (trr): | 22ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The APT30GT60BRDQ2G is a 600 Volt low capacitance insulated gate bipolar transistor (IGBT) from Aptiv. This single IGBT device is optimized for high speed switching applications, with a low on-state conduction voltage and high switching speed supported by fast and soft turn-off technology. This device is suitable for applications where tight switching times and sub-nanosecond dynamic performance are required, such as motor control, motor drives, industrial automation and high voltage power conversion.
The APT30GT60BRDQ2G is a single IGBT device with a drain current rating of 30A, a blocking voltage rating of 600V, and a maximum junction temperature rating of 175°C. This IGBT device features a fast switching speed with low switching losses, with an estimated turn-off time of 10ns and an estimated dynamic dV/dt of 30V/ns. Features such as soft turn-off, overvoltage protection and diode-in-anti-parallel (DIAP) ensure reliable and robust operation in demanding applications.
The working principle of the APT30GT60BRDQ2G is based on the characteristics of an IGBT. An IGBT is a type of switch that allows for current to flow in one direction but blocks current in the opposite direction. It has a main schottky diode for fast switching speeds and low conduction time, and a N-channel insulated-gate bipolar transistor (IGBT) and diode-in-anti-parallel (DIAP) for controlling a load current. The IGBT allows the voltage to be switched from a low to a high value, allowing current to flow from the drain to the source. The DIAP is a high-speed, low-voltage device that prevents current from flowing back to the drain after the IGBT is turned off.
The APT30GT60BRDQ2G is ideal for use in various high voltage power conversion applications, such as motor controllers, motor drives, industrial automation and high voltage AC/DC power conversion, where high speed switching and low on-state conduction is required. The device\'s integrated protection and fast switching times, combined with low operational power losses, make it suitable for high power applications.
In conclusion, the APT30GT60BRDQ2G is a single IGBT device optimized for high speed switching applications. It offers low on-state conduction voltage, fast switching speeds, and integrated protection features such as overvoltage protection and DIAP to ensure reliable and robust operation in demanding applications. This device is suitable for use in various high voltage power conversion applications, such as motor controllers, motor drives, industrial automation and AC/DC power conversion, where high speed switching and low on-state conduction is required.
The specific data is subject to PDF, and the above content is for reference
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