
Allicdata Part #: | APT34M120J-ND |
Manufacturer Part#: |
APT34M120J |
Price: | $ 38.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1200V 34A SOT-227 |
More Detail: | N-Channel 1200V 35A (Tc) 960W (Tc) Chassis Mount S... |
DataSheet: | ![]() |
Quantity: | 2 |
1 +: | $ 34.84530 |
10 +: | $ 32.79840 |
30 +: | $ 30.74840 |
100 +: | $ 29.31350 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 960W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 18200pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 560nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT34M120J is a single, N-channel, enhancement mode, power MOSFET device housed in a low profile industry-standard TO-220 package. The device is specifically designed to allow the MOSFET to be mounted directly to the system\'s heat sink, allowing for improved power and thermal management in systems with high power requirements. This type of MOSFET offers excellent switch performance and high power dissipation capability.
The APT34M120J’s main application field is in motor control, power conversion, and power management systems. It can be used as a switch in power supplies, AC/DC, DC/DC converters, and various other power-conversion applications, such as automatic battery chargers, UPS systems, and power inverters. It can also be used as the main switch in various motor-control and home-appliance control applications, including air conditioners and heaters. With its low On-Resistance and fast response time, the APT34M120 is well suited for high-current-load applications needed in automotive powertrain systems.
The working principle of the APT34M120J is based on its Gate-to-Source voltage (VGS) characteristic. When the Gate-to-Source voltage is greater than the drain-to-source voltage (VDS), current flows through the MOSFET, allowing the MOSFET to be used as a switch. When the voltage is less than the drain-to-source voltage, the MOSFET is effectively off and the current flow is stopped. As the Gate-to-Source voltage is increased, the conductance of the MOSFET increases until the On-Resistance (RDSon) is reached at which point it becomes saturated. By controlling the Gate-to-Source voltage, the current through the MOSFET can be accurately and quickly adjusted, making it ideal for high-power applications.
The APT34M120J offers a low RDSon of 5 mΩ, a gate-to-source threshold voltage of 1.52 V, and high temperature certification. Its low gate charge (Qg) of 8.8 nC ensures a low input capacitance, making it more efficient and simpler to drive. In addition, the device can handle currents up to 25 A, making it suitable for a wide range of applications.
In summary, the APT34M120J is a single N-channel MOSFET housed in a low profile package. It offers excellent switch performance and high power dissipation, making it suitable for applications such as motor control, power conversion, and power management systems. Its low gate charge and threshold voltage, as well as its high temperature certification, makes it an ideal choice for high-power applications. Its low On-Resistance and fast response time make it well suited for high-current-load automotive powertrain systems.
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