APT34F100L Allicdata Electronics
Allicdata Part #:

APT34F100L-ND

Manufacturer Part#:

APT34F100L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 1000V 35A TO264
More Detail: N-Channel 1000V 35A (Tc) 1135W (Tc) Through Hole T...
DataSheet: APT34F100L datasheetAPT34F100L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1135W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 400 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The APT34F100L is a single field effect transistor (FET) from Advanced Power Technologies. It is a n-channel enhancement-mode transistor, offering excellent performance in low-voltage applications. The APT34F100L is a high-efficiency device capable of providing high currents of up to 100A and operating at voltages of up to 50V.

The APT34F100L can be used for many different applications, such as controlling power in low voltage systems, switching circuits, and providing low voltage temporary surge protection. The device is well suited for these types of applications due to its low on-state resistance, fast switching speed, and ability to operate across a wide temperature range of -55°C to +150°C.

The working principle of the APT34F100L FET is based on the movement of electrons between two regions of a semiconductor material. The device consists of a source terminal and a drain terminal. These two terminals form the two regions of the material, also known as depletion regions. When a positive voltage is applied to the gate, it creates an electrical field surrounding the depletion regions and allows the electrons to move freely between them. This movement of electrons is what controls the current and voltage in the device.

The APT34F100L can be used in a variety of applications where a low-voltage, high-efficiency device is required. It can be used to control power in low voltage systems, switching circuits, and provide temporary surge protection. Its low on-state resistance and fast switching speed make it ideal for these types of applications. The wide temperature range of the device further allows it to be used in a variety of harsher environments.

The APT34F100L is a single FET that offers excellent performance for low voltage applications. It has a low on-state resistance, has a fast switching speed, and can operate within a wide temperature range. It is ideal for controlling power in low voltage systems, switching circuits, and providing temporary surge protection. The device is easy to use and provides reliable operation at all times.

The specific data is subject to PDF, and the above content is for reference

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