APT30GP60BDQ1G Allicdata Electronics
Allicdata Part #:

APT30GP60BDQ1G-ND

Manufacturer Part#:

APT30GP60BDQ1G

Price: $ 8.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 600V 100A 463W TO247
More Detail: IGBT PT 600V 100A 463W Through Hole TO-247 [B]
DataSheet: APT30GP60BDQ1G datasheetAPT30GP60BDQ1G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 7.35210
10 +: $ 6.61941
25 +: $ 6.03061
100 +: $ 5.44238
250 +: $ 5.00109
500 +: $ 4.55983
Stock 1000Can Ship Immediately
$ 8.09
Specifications
Power - Max: 463W
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 400V, 30A, 5 Ohm, 15V
Td (on/off) @ 25°C: 13ns/55ns
Gate Charge: 90nC
Input Type: Standard
Switching Energy: 260µJ (on), 250µJ (off)
Series: POWER MOS 7®
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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APT30GP60BDQ1G is a single IGBT (Insulated Gate Bipolar Transistor), developed and manufactured by Alpha and Omega Semiconductor (AOS). It is a Punch Through IGBT based on the advanced field-emission structure, which provides many benefits over comparable MOSFETs, such as higher operating frequency, better noise immunity, and faster switching abilities. This device is best suited for applications such as motor control, DC/DC converter, and switched mode power supplies, where low conduction and switching loss are important.

The APT30GP60BDQ1G\'s wide junction temperature range of -55°C to 175°C, along with its wide voltage range of 30V to 600V, makes it perfect for today\'s diverse power and controller electronics systems, as well as automotive, consumer and industrial applications. In addition, the APT30GP60BDQ1G\'s high current handling capability means that higher power ratings can be achieved, allowing for more power to be condensed into a smaller and more space-efficient package. The low gate charge and low thermal resistance of the APT30GP60BDQ1G also help to reduce power losses and keep the internal temperatures of the system in check.

When it comes to the working principle of the APT30GP60BDQ1G, it uses the same principles as any other IGBT. An IGBT is a combined N-channel MOSFET and P-channel MOSFET connected in series. When an external gate signal is applied to the device, the N-channel MOSFET turns on and the P-channel MOSFET turns off. This causes current to flow between the device source and drain. The amount of current that flows can be controlled by the amount of voltage applied to the gate.

The APT30GP60BDQ1G is a very versatile device, which has a wide range of applications. It can be used for controlling AC induction motors, for regulating the output voltage of power converters, for high speed switching applications, and for power management applications. The device can also be used in renewable energies such as wind and solar power, as well as any kind of power control tasks. In short, this single IGBT is suitable for serving a variety of needs in today\'s modern power and controller electronics systems.

In conclusion, the APT30GP60BDQ1G is a single IGBT from AOS that features a wide range of performance capabilities. It is especially suited for motor control, DC/DC converter, and switched mode power supplies applications, and has wide temperature and voltage ranges, along with high current handling capability. The device works on the same principle as any other IGBT, using an N-channel MOSFET and P-channel MOSFET connected in series. It also has several applications in the realm of power management, power conversion, and high speed switching.

The specific data is subject to PDF, and the above content is for reference

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